Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Jeffrey J. Figiel"'
Autor:
Thomas E. Beechem, Andrew A. Allerman, Jeffrey J. Figiel, Catalin D. Spataru, Mary H. Crawford, Anthony Rice, Michael R. Smith, Taisuke Ohta
Publikováno v:
Journal of Crystal Growth. 485:90-95
The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows an
Publikováno v:
Journal of Crystal Growth. 464:132-137
Growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measur
Autor:
Ting S. Luk, Changyi Li, Igal Brener, Jeffrey J. Figiel, George T. Wang, Steven R. J. Brueck, Sheng Liu
Publikováno v:
Nanoscale. 8:5682-5687
We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clea
Publikováno v:
Journal of Crystal Growth. 427:67-71
In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead
Autor:
Ting S. Luk, Ganesh Balakrishnan, George T. Wang, Jeffrey J. Figiel, Jeremy B. Wright, Changyi Li, Michael E. Coltrin, Arthur J. Fischer, Xiaoyin Xiao, Jeffrey Y. Tsao, Ping Lu, Daniel D. Koleske, Benjamin Leung, Miao-Chan Tsai, Steven R. J. Brueck, Sheng Liu, Igal Brener
Publikováno v:
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).
III-nitride based nanostructures have gained interest as nanoscale light sources in the UV to visible wavelengths. Here we present a top-down approach to enable vertical, high aspect ratio III-nitride-based nanowires with controllable height, pitch,
Autor:
Benjamin Leung, Igal Brener, Weng W. Chow, George T. Wang, Sheng Liu, Changyi Li, Jeremy B. Wright, T. S. Luk, Jeffrey J. Figiel, S. R. J. Brueck, Daniel D. Koleske, Ping Lu, Daniel F. Feezell
Publikováno v:
Nano letters. 17(2)
We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process fol
Publikováno v:
physica status solidi (a). 211:748-751
Complex axial and radial type III-nitride InGaN/GaN nanowire LEDs are realized using a recently developed top–down fabrication approach which enables high quality GaN-based nanowires with independently controlled height, pitch, and diameter. In thi
Autor:
George T. Wang, Ting S. Luk, Jeremy B. Wright, Sheng Liu, Jeffrey J. Figiel, Igal Brener, Daniel D. Koleske, Steven R. J. Brueck, Benjamin Leung, Ganesh Balakrishnan, Changyi Li
Publikováno v:
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristic
Publikováno v:
Advanced Materials. 21:2416-2420
Autor:
Benjamin Leung, Weng W. Chow, Changyi Li, Sheng Liu, George T. Wang, Igal Brener, Qiming Li, Jeremy B. Wright, Ting S. Luk, Daniel D. Koleske, Jeffrey J. Figiel, Tzu-Ming Lu
There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b06c59f1d1217bcaa80c360e79153bd
https://doi.org/10.2172/1222989
https://doi.org/10.2172/1222989