Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeffrey Haller"'
Autor:
Patrick J Gullane, Dennis Rohner, James Q Swift, Raquel Guijarro-Martínez, Christopher Mohr, Joachim Prein, Nils-Claudius Gellrich, Carl-Peter Cornelius, Gregorio Sánchez Aniceto, Edward Ellis, Dieter Weingart, Majeed Rana, Sven Otto, Peter Bucher, Michael P Grant, Maria E Papadakis, Marcin Czerwinski, Jürgen Hoffmann, Bernard Devauchelle, Neal D Futran, Jeffrey Haller, Frank Wilde, Jamie Gateno, Rainer Schmelzeisen, Hans-Florian Zeilhofer, Richard A Hopper, Ralf Gutwald, Martin Stoddart, Dominik Horn, Adrian Sugar, John F Teichgraeber, Gido Bittermann, Stéphanie Dakpé, Sylvie Testelin, Navin K Singh, Henning Hanken, Beat Hammer, Chen Lee, Florian A Probst, Robert M Kellman, Nicholas R Mahoney, Risto Kontio, Gerson Mast, Marc C Metzger, Leonard B Kaban, Faisal Al-Mufarrej, Larry A Sargent, Remy H Blanchaert, Nicholas J Panetta, Peter C Neligan, Ignacio Ismael García Recuero, Jesse A Taylor, Rolf Bublitz, E Bradley Strong, Maria J Troulis, Alexander Metz, Roman P Pförtner, Keith Jones, Marc Bohner, James J Xia, Martin Rücker, Michel Richter, Alexander Schramm, Douglas W Klotch, Florian M Thieringer, R Bryan Bell, Christoph Kunz, Ralf Schumacher, Warren Schubert, Michael Ehrenfeld, Keith A Hurvitz, Christine B Novak, Geoff Richards, Gregory Rd Evans, Maximillian Schöllchen, Jörg Beinemann, Suad Aljohani, Paul N Manson, Thomas Hierl, Alexander Hemprich, Christine Hagenmaier, Sebastian Sauerbier, Berton Rahn, Max Heiland, Jeffrey C Posnick, Reid V Mueller, Daniel Buchbinder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fedd92296ef1944da313c8dd4710529
https://doi.org/10.1055/b-000-000139
https://doi.org/10.1055/b-000-000139
Autor:
Chirag Gupta, Umesh K. Mishra, Bill Cruse, Stacia Keller, Dong Ji, Wenwen Li, Davide Bisi, Anchal Agarwal, Silvia H. Chan, Srabanti Chowdhury, Jeffrey Haller, Michelle Labrecque, Rakesh K. Lal
Publikováno v:
IEEE Electron Device Letters. 39:1030-1033
This letter reports on the dynamic $R_{\text{ON}}$ performance of large-area GaN vertical trench MOSFETs (OG-FETs) fabricated on bulk GaN substrates. OG-FETs demonstrated excellent DC performance with a breakdown voltage of 900 V and a $R_{\text{ON}}
Autor:
Haoran Li, Steven Wienecke, Matthew Guidry, Stacia Keller, Brian Romanczyk, Umesh K. Mishra, Onur S. Koksaldi, Jeffrey Haller
Publikováno v:
IEEE Electron Device Letters. 39:1014-1017
Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-voltage switching applications were fabricated on epi-layers grown by metal-organic chemical vapor deposition on sapphire substrates. Devices demonstrated a combina
Autor:
Haoran Li, Brian Romanczyk, Stacia Keller, Umesh K. Mishra, Jeffrey Haller, Onur S. Koksaldi, Matthew Guidry
Publikováno v:
Semiconductor Science and Technology. 35:124004
Publikováno v:
Pediatric neurosurgery. 38(1)
In the second of these two articles, we will discuss our clinical experience with skull base surgery in the pediatric population. We present a retrospective analysis of 55 patients less than 16 years of age who underwent skull base surgical approache
Publikováno v:
The Laryngoscope. 103:1081
Chemotherapeutic treatment of squamous cell carcinoma (SCC) of the head and neck has been largely ineffective because of tumor cell resistance. This study examined combinations of cisplatin, 4' demethylepipodophyllotoxin ethylidene D-glucoside (VP-16
Publikováno v:
Archives of otolaryngology--headneck surgery. 113(8)
• Investigations of the effect of dimethyl sulfoxide (DMSO) on skin flap survival have generated mixed results. In addition, to our knowledge, the effect of systemic DMSO on skin flap blood perfusion has not been previously studied. For this study,