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pro vyhledávání: '"Jeffrey Geypen"'
Autor:
Jen-Kan Yu, Johan Vertommen, Tsvetan Ivanov, Yoshie Kimura, Dennis Lin, Aaron Thean, Nadine Collaert, Jeffrey Geypen, Reza Arghavani, Hugo Bender, Mohammad Ali Pourghaderi, Jef Marks, Samantha Tan, David Hellin, Vahid Vahedi, Gowri Kamarthy
Publikováno v:
Japanese Journal of Applied Physics. 53:04EC20
The onset of the 22 nm node introduced three dimensional tri-gate transistors into high-volume manufacturing for improved electrostatics. The next generations of fin nMOSFETs are predicted to be InGaAs based. Due to the ternary nature of InGaAs, stoi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb448d29fb83616b43a055e103f7f42
https://doi.org/10.7567/jjap.53.04ec20
https://doi.org/10.7567/jjap.53.04ec20
