Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jeffrey D. Wilkinson"'
Autor:
Olivier Gayou, Jonathan B. Farr, David S Followill, Arthur K. Liu, Carlos Esquivel, Jeffrey D. Wilkinson, Stephen F Kry, Chester S. Reft, Richard A. Popple, Mahadevappa Mahesh, Coen W. Hurkmans, Michael S. Gossman, Moyed Miften, Joann I. Prisciandaro, Dimitris Mihailidis
Publikováno v:
Medical physicsReferences. 46(12)
Managing radiotherapy patients with implanted cardiac devices (implantable cardiac pacemakers and implantable cardioverter-defibrillators) has been a great practical and procedural challenge in radiation oncology practice. Since the publication of th
Publikováno v:
Medical Dosimetry. 39:320-324
In a 2-part study, we first examined the results of 71 surveyed physicians who provided responses on how they address the management of patients who maintained either a pacemaker or a defibrillator during radiation treatment. Second, a case review st
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4547-4554
Oscillation frequency of a high voltage ring oscillator is observed to change non-linearly with increasing dose. The change in oscillation is caused by buildup of oxide-trapped charge in both gate and isolation oxides post-radiation. A simulation met
Autor:
S Peterson, Marc A. Rozner, Peter A Balter, Jeffrey D. Wilkinson, Jerimy C. Polf, L. Wootton, Sam Beddar
Publikováno v:
Journal of Applied Clinical Medical Physics
An increasing number of patients undergoing proton radiotherapy have cardiac implantable electrical devices (CIEDs). We recently encountered a situation in which a high‐voltage coil on a lead from an implanted cardiac defibrillator was located with
Autor:
J. D. Rollins, Jeffrey D. Wilkinson, Garrett Schlenvogt, L. Tyler, Hugh J. Barnaby, Scott M. Morrison
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2863-2870
Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geomet
Autor:
Jeffrey D. Wilkinson, Alison R. Graves-Calhoun, James S. Powell, Kunal J. Paralikar, Michael S. Gossman, Raymond C. Lawson, Adam O. Hebb, Jeffrey P. Lopez
Publikováno v:
Journal of X-Ray Science and Technology. 19:443-456
OBJECT Where no society-based or manufacturer guidance on radiation limits to neuromodulation devices is available, this research provides the groundwork for neurosurgeons and radiation oncologists who rely on the computerized treatment plan clinical
Autor:
S. Hareland, Jeffrey D. Wilkinson
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:428-433
Modern implantable medical devices use a variety of circuit and architectural features to ensure high levels of data integrity, especially data related to patient therapies and safety. Since modern implantable medical devices, such as implantable car
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:449-451
The undesirable production of secondary neutrons by cancer-radiotherapy linear accelerators (linac) has been demonstrated to cause soft errors in nearby electronics through the /sup 10/B(n,a)/sup 7/Li reaction. /sup 10/B is a component in the BPSG us
Autor:
T. Wu, Jeffrey D. Wilkinson, Brett M. Clark, M.S. Gordon, Rick Wong, J. Marckmann, Brendan D. McNally, Yi He, Charles Slayman
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
A follow-up alpha emissivity study was conducted to examine the wide variability observed in previous work that was hypothesized to be due to differences in the pulse height discrimination threshold among participant's equipment. Two samples, one mix
Autor:
Brendan D. McNally, Brett M. Clark, Jeffrey D. Wilkinson, Olivier Lauzeral, Jennifer Marckmann, Michael Tucker, Richard Wong, Yi He, Philippe Roche, Charles Slayman, Barry Carroll, Michael S. Gordon, Tommy Wu, Keith Lepla
Publikováno v:
2011 International Reliability Physics Symposium.
Alpha counting measurement methods have been widely used in the semiconductor industry for many years to assess the suitability of materials for semiconductor production and packaging applications. Although a number of published articles describe asp