Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeffrey C. Maling"'
Autor:
Charles A. Whiting, Thai Doan, Jessie Rosenberg, Yves Martin, Natalie B. Feilchenfeld, Robert K. Leidy, Carol Reinholm, John J. Ellis-Monaghan, Fuad E. Doany, Tymon Barwicz, D. M. Gill, Wilfried Haensch, Sebastian Engelmann, Marwan H. Khater, Steven M. Shank, Ankur Agrawal, Mounir Meghelli, J. Ferrario, B.J. Offrein, Christian W. Baks, B. Cucci, Jeffrey C. Maling, Eric A. Joseph, Christa R. Willets, Jason S. Orcutt, S. Chilstedt, Edward W. Kiewra, Chi Xiong, Y. Ding, F. Baker, Jens Hofrichter, Frederick G. Anderson, Dinh Dang, Jonathan E. Proesel, Crystal M. Hedges, Frank R. Libsch, M. Nicewicz, Michael S. Gordon, Xiaowei Tian, Bruce W. Porth, K. McLean, W. M. J. Green, Wesley D. Sacher, Andreas D. Stricker, Folkert Horst
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition,
Autor:
Jason S. Orcutt, Tymon Barwicz, Marwan H. Khater, Stephan L. Martel, Alexander Janta-Polczynski, Yan Thibodeau, Paul Fortier, Robert K. Leidy, Sebastian Engelmann, William M. J. Green, Jeffrey C. Maling
Publikováno v:
OFC
A metamaterial interface between standard optical fibers and silicon waveguides was fabricated in a CMOS production facility and shows −1.3dB peak efficiency with 0.8dB penalty over a 100 nm bandwidth and all polarizations.
Autor:
I. Vitomirov, M.D. Gordon, Dana Dereus, Shawn J. Cunningham, Z.-X. He, N. Lai, Eric J. White, Jeffrey C. Maling, William J. Murphy, C. Gillman, S.L. Luce, B.K. Wong, Art Morris, A. K. Stamper, Christopher V. Jahnes
Publikováno v:
2012 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
Autor:
Eric J. White, Russell T. Herrin, Christopher V. Jahnes, I. Vitomirov, Z.X. He, Dana Dereus, D. R. Miga, S. E. Luce, Shawn J. Cunningham, Art Morris, William J. Murphy, S. R. Dupuis, Jeffrey C. Maling, A. Gupta, A.K. Stamper
Publikováno v:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.
MEMS capacitor switches have been integrated with high voltage CMOS ICs. The MEMS were formed with the final three AlCu wiring levels in SiO 2 using a planar sacrificial silicon cavity process. The MEMS cavities were hermetically sealed at less than