Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Jeffrey Britt"'
Publikováno v:
ECS Transactions. 98:3-11
High temperature growth of AlN single crystals by physical vapor transport (PVT) was used to produce 2-inch diameter AlN substrates free of macrodefects and with average dislocation densities below 103 cm-2 [1, 2]. In spite of its high structural qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0f7e1995aa2f0233b52c3ccebbddecc
https://doi.org/10.1149/09806.0003ecst
https://doi.org/10.1149/09806.0003ecst
Autor:
Raoul Schlesser, Hao Yang Fang, Jeffrey Britt, Rafael Dalmau, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Materials Science Forum. 1004:63-68
Large diameter aluminum nitride (AlN) substrates, up to 50 mm, were manufactured from single crystal boules grown by physical vapor transport (PVT). Synchrotron-based x-ray topography (XRT) was used to characterize the density, distribution, and type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55887aa9361a41e50ae091647091897a
https://doi.org/10.4028/www.scientific.net/msf.1004.63
https://doi.org/10.4028/www.scientific.net/msf.1004.63
Publikováno v:
ECS Meeting Abstracts. :1350-1350
The ultrawide-bandgap (UWBG) AlGaN alloy system is emerging as a promising material for next generation power semiconductor devices. The increase in bandgap as the alloy composition is varied from the binary endpoints GaN to AlN leads to an increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59f6016e4cf5fc764e797f0144708575
https://doi.org/10.1149/ma2022-02371350mtgabs
https://doi.org/10.1149/ma2022-02371350mtgabs
Autor:
Shanshan Hu, Haoyan Fang, Yafei Liu, Hongyu Peng, Qianyu Cheng, Zeyu Chen, Rafael Dalmau, Jeffrey Britt, Raoul Schlesser, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 584:126548
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ac336a7090d82b4836b9fe7e0a9ed5
https://doi.org/10.1016/j.jcrysgro.2022.126548
https://doi.org/10.1016/j.jcrysgro.2022.126548
Autor:
Balaji Raghothamachar, Raoul Schlesser, Rafael Dalmau, Jeffrey Britt, Baxter Moody, Yeon Jae Ji, Jianqiu Guo, Michael Dudley, Elizabeth A. Paisley, H. Spalding Craft
Publikováno v:
Materials Science Forum. 924:923-926
Aluminum nitride (AlN) single crystal boules were grown by physical vapor transport (PVT). Diameter expansion during boule growth, without the introduction of low angle grain boundaries (LAGB) around the boule periphery, was confirmed by crossed pola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42053bebfd4ebc6cbb5d2fced3451f1
https://doi.org/10.4028/www.scientific.net/msf.924.923
https://doi.org/10.4028/www.scientific.net/msf.924.923
Autor:
Haoyan Fang, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Rafael Dalmau, Raoul Schlesser, Jeffrey Britt, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghothamachar, Shanshan Hu, Michael Dudley
Publikováno v:
ECS Meeting Abstracts. :987-987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39add1e26be77b120967cfab38114c61
https://doi.org/10.1149/ma2021-0234987mtgabs
https://doi.org/10.1149/ma2021-0234987mtgabs
Publikováno v:
ECS Meeting Abstracts. :986-986
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f743ef40ecfa0e62d19658d6df6d48e
https://doi.org/10.1149/ma2021-0234986mtgabs
https://doi.org/10.1149/ma2021-0234986mtgabs
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245832e6e916bc83a1af86d179395c71
https://doi.org/10.1109/pvsc.2017.8521471
https://doi.org/10.1109/pvsc.2017.8521471
Publikováno v:
ECS Meeting Abstracts. :1368-1368
As development of GaN and SiC material systems for applications in power switching progresses, the ultrawide-bandgap (UWBG) materials, with bandgaps greater than GaN, are gaining increased attention, in pursuit of improved power device performance. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a296949cf2f4cbea3d91c979710e9cca
https://doi.org/10.1149/ma2019-02/31/1368
https://doi.org/10.1149/ma2019-02/31/1368
Autor:
Donnie Starnes, Jeffrey Britton, David Burkholder, Walter Kennebeck, Iffat Suchita, Nicholas Gregg, Bryan Klassen, Brian Lundstrom
Publikováno v:
Brain Stimulation, Vol 14, Iss 6, Pp 1698- (2021)
Externí odkaz:
https://doaj.org/article/2d78bf71cacf4a47a0bc34c1bdea5870