Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jeffrey B.W. Soon"'
Autor:
Jeffrey B.W. Soon, Gianluca Piazza, Navab Singh, Cristian Cassella, Nicolo Oliva, Merugu Srinivas
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:105-107
In this work we demonstrate high values of electromechanical coupling coefficient ( $k_{t}^{2}$ ) exceeding 4.9% in 1- $\mu \text {m}$ thick Aluminum Nitride (AlN) two-dimensional-mode resonators (2DMRs) operating around 3.2 GHz. Such a high $k_{t}^{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a9811613d203703f58467c7b26a4f5
https://doi.org/10.1109/lmwc.2016.2646924
https://doi.org/10.1109/lmwc.2016.2646924
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:331-339
We report Lamb acoustic wave resonators that are suitable for RF applications and that exhibit high power handling at high frequencies above 1 GHz. Resonators use aluminum–nitride as acoustic layer and are fabricated in the Institute of Microelectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a9009ff88cba933806bc3111dda843
https://doi.org/10.1109/tmtt.2014.2381244
https://doi.org/10.1109/tmtt.2014.2381244
Publikováno v:
2016 IEEE International Ultrasonics Symposium (IUS).
A systematical study is performed to analyze the spurious modes, Q and electromechanical coupling of 1.22 GHz AlN MEMS contour-mode resonators. A total of 135 different geometrical configurations were studied. An unloaded Q of up to 3157, an electrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11156afb0b4b0a5874dc711c1a656104
https://doi.org/10.1109/ultsym.2016.7728489
https://doi.org/10.1109/ultsym.2016.7728489
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
We report a hermetic thin film packaging on aluminum nitride AlN RF MEMS platforms that is entirely CMOS compatible and wafer level executed. The process flow, including release of multiple free-moving body and encapsulation of the functional structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::671e4a948fe11ab9bc29cdcf266a5a68
https://doi.org/10.1109/ectc.2016.317
https://doi.org/10.1109/ectc.2016.317
Autor:
Jeffrey B.W. Soon, Dim-Lee Kwong, Nan Wang, Fu-Li Hsiao, Chengkuo Lee, Moorthi Palaniapan, Ming Lin Julius Tsai
Publikováno v:
Advanced Materials Research. 254:195-198
Two-dimensional (2-D) Silicon phononic crystal (PnC) slab of a square array of cylindrical air holes in a 10μm thick free-standing silicon plate with line defects is characterized as a cavity-mode PnC resonator. Piezoelectric aluminum nitride (AlN)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18c9f42e8be926263dd0cbd19ead256
https://doi.org/10.4028/www.scientific.net/amr.254.195
https://doi.org/10.4028/www.scientific.net/amr.254.195
Publikováno v:
Advanced Materials Research. 254:74-77
This paper presents an effective evaluation of piezoelectric coefficients (d31 and d33) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d31 is 1.60pm/V and the d33 val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a902f54129b4f9c49e6a9cad54ade5f1
https://doi.org/10.4028/www.scientific.net/amr.254.74
https://doi.org/10.4028/www.scientific.net/amr.254.74
Publikováno v:
Advanced Materials Research. 254:70-73
Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24352176f208b38be9b7433301571f0
https://doi.org/10.4028/www.scientific.net/amr.254.70
https://doi.org/10.4028/www.scientific.net/amr.254.70
Autor:
Kia Hian Lau, Ming Lin Julius Tsai, Tang Min, Lynn Khine, Jeffrey B.W. Soon, Rahul Agarwal, Sanchitha Nirodha Fernando
Publikováno v:
Advanced Materials Research. 254:29-33
This paper presents a novel piezoelectric actuator design that achieves low curling due to residual film stress. The proposed actuator maintains the gap between the movable electrode and the fixed electrode nearly constant independent of the residual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64149f710768f3e91b674b57e65837e4
https://doi.org/10.4028/www.scientific.net/amr.254.29
https://doi.org/10.4028/www.scientific.net/amr.254.29
Publikováno v:
2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC).
Through Silicon Via (TSV) provides an alternative solution to the traditional scaling of Moore's Law. Besides the many advantages including reduction in form factor, higher I/O counts and lower power consumption, TSV also enables 3D heterogeneous int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d465c47fbf4b26c725552dc4518f483
https://doi.org/10.1109/eptc.2015.7412340
https://doi.org/10.1109/eptc.2015.7412340
Autor:
Navab Singh, Vittorio Ferrari, Jeffrey B.W. Soon, Srinivas Merugu, Margarita Narducci, Humberto Campanella, Marco Ferrari
This paper presents three MEMS platforms that exhibit multiple thermal sensitivities and multi-frequency capabilities. Multiple sensors with a variety of operating frequencies and thermal sensitivities can co-exist in the same device wafer. Aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::752d7771f88899fef9ace84e4adc79f9
http://hdl.handle.net/11379/462763
http://hdl.handle.net/11379/462763
