Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Jeffrey B. Casady"'
Publikováno v:
Materials Science Forum. :915-920
We report a 900V 4H-SiC depletion mode (DM) VJFET with a specific on-resistance (RDSON,SP) of 1.46mOhm-cm2 at VGS=2.5V, IDS=10A. The RDSON,SP of the DM VJFET, designed for 600V-800V applications, is one of the lowest reported for a VJFET and is an or
Autor:
C. Parker, David C. Sheridan, James Gafford, Robin Schrader, Andrew N. Lemmon, Kevin M. Speer, Michael S. Mazzola, Jeffrey B. Casady
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000144-000148
This is the first high-temperature static and dynamic characterization of a half-bridge power module using 1200 V, 45 mΩ depletion-mode vertical JFETs. With only 36 mm2 of JFET area, the peak pulsed current is measured to be nearly 500 A at room tem
Autor:
Enrico Santi, Zhiyang Chen, Alexander Grekov, Jeffrey B. Casady, David C. Sheridan, Ruiyun Fu, Jerry L. Hudgins, Homer Alan Mantooth
Publikováno v:
IEEE Transactions on Industry Applications. 47:1853-1861
A novel SiC junction field-effect transistor (JFET) model that uses a unified description of linear and saturated conduction modes is proposed. Advantages of the proposed model are improved robustness and convergence, inclusion of field-dependent mob
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:000098-000103
The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It i
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:000152-000159
Normally-off Silicon Carbide (SiC) power Junction Field Effect Transistors (JFETs) were compared with competing power transistor technology at temperatures from 25 °C to 150 °C as limited by the packaging. Switching energies were measured from 1200
Publikováno v:
Solid-State Electronics. 46:605-613
An overview of silicon carbide (SiC) static induction transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additional
Autor:
C.D. Brandt, David C. Sheridan, M.F MacMillan, Larry B. Rowland, Anant K. Agarwal, Jeffrey B. Casady, R.R. Siergiej, Phillip Albert Sanger, S. Seshadri
Publikováno v:
Solid-State Electronics. 42:2165-2176
Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices. This paper presents an overview of SiC power devices and concludes that
Autor:
E. D. Luckowski, R. W. Johnson, Jeffrey B. Casady, M. Bozack, David C. Sheridan, John R. Williams
Publikováno v:
Journal of The Electrochemical Society. 143:1750-1753
The use of pure NF 3 source gas in reactive ion etching of bulk and epitaxy Si-face, 6H-SiC, and 4H-SiC is reported. The effects of RF power and chamber pressure on etch rate and surface morphology are discussed. A process developed for a smooth, res
Publikováno v:
Journal of Electronic Materials. 32:423-425
The dynamics of hydrogen capture and release from trapping centers in 6H-SiC after plasma hydrogenation and annealing was investigated by low-temperature photoluminescence (PL). Indications of competing processes of hydrogen capture by different trap
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel