Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jeffrey A. Schefske"'
Autor:
X. Cai, R. Ghaskadavi, T. Schedel, R. Cantrell, P. Nesladek, Chris Clifford, M. Bender, R. Moses, Pawitter Mangat, Uzodinma Okoroanyanwu, E. Mohn, X. Zhu, H. Rolff, Jeffrey A. Schefske, N. Schmidt, Licausi Nicholas, W. Taylor, Obert Wood, J. Heumann, Fan Jiang
Publikováno v:
SPIE Proceedings.
Pending the availability of actinic inspection tools, optical inspection tools with 193 nm DUV illumination wavelength are currently used to inspect EUV masks and EUVL-exposed wafers. Due to strong optical absorption, DUV photons can penetrate only a
Autor:
Tom Wallow, Deniz E. Civay, Anita Fumar-Pici, Jeffrey A. Schefske, Raymond Maas, Coen Verspaget, S. Wang, Joerg Mallman, Y. van Dommelen, Mandeep Singh, H. F. Hoefnagels, Steven G. Hansen, Gazi Tanriseven
Publikováno v:
SPIE Proceedings.
The major challenge for EUV resists at 22 nm half-pitch and below continues to be simultaneously achieving resolution, sensitivity, and line-width roughness (LWR) targets. An ongoing micro-exposure tool (MET) based evaluation of leading resists throu
Autor:
Harry J. Levinson, Craig Higgins, Hui Peng Koh, Pawitter Mangat, Keith Standiford, Jeffrey A. Schefske, Mandeep Singh, Ralph Schlief, Thomas I. Wallow, Fan Jiang, Chris Clifford, Yi Zou, Sudhar Raghunathan, Azat Latypov, Deniz E. Civay, Lei Sun, Obert Wood, Oleg Kritsun
Publikováno v:
SPIE Proceedings.
Although the k1 factor is large for extreme ultraviolet (EUV) lithography compared to deep ultraviolet (DUV) lithography, OPC is still needed to print the intended patterns on the wafer. This is primarily because of new non-idealities, related to the
Autor:
Matthew E. Colburn, John G. Hartley, Dario L. Goldfarb, Kenji Yoshimoto, Hirokazu Kato, Craig Higgins, Karen Petrillo, Ananthan Raghunathan, Jeffrey A. Schefske, Obert Wood, Thomas I. Wallow
Publikováno v:
SPIE Proceedings.
In this study, we have analyzed new data sets of pattern collapse obtained from 300 mm wafers which were coated with a process-of-record (POR) EUV resist and exposed by an EUV Alpha-Demo tool (ADT) and a Vistec VB300 e-beam exposure tool. In order to
Autor:
Jeffrey A Schefske, Anna Minvielle, Lovejeet Singh, Terry Manchester, David Tien, Joerg Reiss, John C. Robinson, Kelly O'Brien, Eric Kent, Jim Manka, Brad Eichelberger
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Overlay control is gaining more attention in recent years as technology moves into the 32nm era. Strict overlay requirements are being driven not only by the process node but also the process techniques required to meet the design requirements. Doubl
Autor:
Brad Eichelberger, Kevin Huang, Jeffrey A Schefske, Lovejeet Singh, David Tien, Anna Minvielle, Kelly O'Brien, Frank Tsai
Publikováno v:
Optical Microlithography XXI.
The industry is facing a major challenge looking forward on the technology roadmap with respect to overlay control. Immersion lithography has established itself as the POR for 45nm and for the next few nodes. As the gap closes between scanner capabil