Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeffrey A. Leavey"'
Publikováno v:
2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 2000 (Cat. No.00CH37072).
Defect monitoring is increasingly required for advanced line maintenance. The resulting information from wafer inspection can be used in two ways, (1) excursion detection, which requires an appropriately measured response, and (2) pro-active process
Publikováno v:
SPIE Proceedings.
Defect monitoring is increasingly required for advanced line maintenance. A critical decision is how to proceed with lot deposition if an excursion is detected. A methodology based on defect inspection and defective die count analysis was employed wh
Publikováno v:
SPIE Proceedings.
Over the past five years that eh IBM Advanced Lithography Facility (ALF) has been operational, we have learned much about the practical aspects of proximity x-ray lithography: synchrotron reliability; mask manufacturing; process development; and mask
Autor:
Juan R. Maldonado, Raul E. Acosta, Fuad E. Doany, Marie Angelopoulos, Jeffrey A. Leavey, Steven A. Cordes, C. Waskiewicz
Publikováno v:
SPIE Proceedings.
The feasibility of using thin films of organic material as a protective cover for x-ray lithography masks has been demonstrated. A pellicle structure that fits unobtrusively inside the mask-wafer gap and on the x-ray lithography NIST standard ring wa
Autor:
G. P. Murphy, Alex L. Flamholz, Paul D. Agnello, Sang Lee, Daniel J. DeMay, Kenneth J. Giewont, Alvin G. Thomas, Steve Loh, Jeffrey A. Leavey, Sue Chaloux, Alek C. Chen, Azalia A. Krasnoperova, Chet Wasik
Publikováno v:
SPIE Proceedings.
X-ray lithography has been used in mix and match mode with optical steppers to build test circuits in support of DRAM and Logic development at IBM's Advanced Semiconductor Technology Center, ASTC. Prior to building the test devices, hundreds of wafer
Autor:
Scott Daniel Hector, Franco Cerrina, Juan R. Maldonado, Srinivas B. Bollepalli, Mumit Khan, Jeffrey A. Leavey
Publikováno v:
SPIE Proceedings.
The printability of defects in x-ray masks was simulated in three dimensions using the CXrL toolset software developed at the University of Wisconsin and resist dissolution software developed in a collaboration between University of California at Ber
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
In our previous paper which we presented here two years ago, we described the ALF (Advanced Lithography Facility), IBM's new facility for X-ray lithography which was built as an addition to the Advanced Semiconductor Technology Center at IBM's semico
Publikováno v:
SPIE Proceedings.
In the previous paper, you heard a description of the electron storage ring system that IBM has ordered for X-ray Lithography. In this paper we shall describe the facility that is being constructed for the ESR and explain some of the decisions made i