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Publikováno v:
physica status solidi (a). 202:727-731
Homoepitaxial growth of GaN by metal organic vapor phase epitaxy (MOVPE) was systematically evaluated using nominal c-plane and various vicinal GaN(0001) wafers: 1°, 2°, 4°, and 8° offcut in the directions of (1010) and (1120). It was found that