Výsledky vyhledávání - "Jeffery B. Fedison"

Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission

Autor: Peter Micah Sandvik, Jeffery B. Fedison, D.M. Brown, Kevin Matocha, J.R. Hibshman

Publikováno v: IEEE Sensors Journal. 8:255-260

Measurements of the ultraviolet emission spectrum emitted from a lean burn premixed natural gas flame were taken over a range of flame temperatures using a fiber-optic/CCD spectrometer. Combustion temperatures were determined by two methods: by measu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e4d16010b269e6863ccc6ec3da044cfd
https://doi.org/10.1109/jsen.2007.913207

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Autor: R.L. Klinger, Evan Downey, Kevin Matocha, J. L. Garrett, Jesse B. Tucker, James W. Kretchmer, Steve Arthur, Jeffery B. Fedison, H.C. Peters, Chris S. Cowen, Larry Burton Rowland

Publikováno v: Materials Science Forum. :1265-1268

Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a la

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a2d2aa4a02bd2915a2cd0d9f3a16e2e
https://doi.org/10.4028/www.scientific.net/msf.527-529.1265

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Silicon carbide photodiode sensor for combustion control

Autor: Jeffery B. Fedison, Peter Micah Sandvik, Kevin Matocha, D.M. Brown, J.W. Kretchmer, J.R. Hibshman, Leo Lombardo

Publikováno v: IEEE Sensors Journal. 5:983-988

A dual silicon carbide photodiode chip was developed to determine the temperature of a natural gas combustion flame. The concept uses the change in shape of the 260-350 nm OH band with temperature. One half of the chip was covered with a long-pass mu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::797ece24fdc89491d037e23e4bb0d7ff
https://doi.org/10.1109/jsen.2005.854143

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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Autor: Mark E. Twigg, Mohammad Fatemi, Steve Arthur, Robert E. Stahlbush, Shao Ping Wang, Jeffery B. Fedison, Jesse B. Tucker

Publikováno v: Materials Science Forum. :537-542

Using plan-view transmission electron microscopy (TEM), we have identified stacking faults (SFs) in 4H-SiC PiN diodes subjected to both light and heavy electrical bias. Our observations suggest that the widely expanded SFs seen after heavy bias are f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::098131e241c1933b2d3d7149c96f2890
https://doi.org/10.4028/www.scientific.net/msf.457-460.537

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Autor: Jeffery B. Fedison, Larry B. Rowland, R. E. Stahlbush, Shao Ping Wang, Mohammad Fatemi, S. D. Arthur

Publikováno v: Journal of Electronic Materials. 31:370-375

Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm2 and 160 A/cm2. Dark areas in the emission develop because of stacking faults and the current capability of the diode drops. More detailed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::987cc5064e094adebf3783b22162311c
https://doi.org/10.1007/s11664-002-0085-8

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