Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeff Nasadoski"'
Autor:
Steven Klopman, Ljubisa Dragoljub Stevanovic, John Stanley Glaser, Peter Almern Losee, Jeff Nasadoski, Alfred Permuy, Alexander Viktorovich Bolotnikov
Publikováno v:
Materials Science Forum. :947-950
This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0d5c9a3b964560d03c5e49a47f41a04
https://doi.org/10.4028/www.scientific.net/msf.778-780.947
https://doi.org/10.4028/www.scientific.net/msf.778-780.947
Autor:
Zachary Stum, Ahmed Elasser, Ljubisa Dragoljub Stevanovic, Steve Arthur, J. L. Garrett, Peter Almern Losee, Alexander Viktorovich Bolotnikov, Jeff Nasadoski, Kevin Matocha, Harsh Naik, T. Paul Chow, John Stanley Glaser
Publikováno v:
Materials Science Forum. :953-956
This paper presents a study of performance and scalability of 8kV SiC PIN diodes focusing on area-dependent yield and sensitivity to material properties variation. Successfully fabricated 18 and 36 mm2 SiC-PiN diodes exhibited avalanche breakdown abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ffab8bf8494977d7e6ef88e1d010ab0
https://doi.org/10.4028/www.scientific.net/msf.717-720.953
https://doi.org/10.4028/www.scientific.net/msf.717-720.953
Autor:
Stephen Daley Arthur, Zachary Stum, Peter Almern Losee, Jeff Nasadoski, R. Ramakrishna Rao, D. Kurt Gaskill, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Charles R. Eddy, Kevin Matocha, Osama Saadeh, Rachael L. Myers-Ward
Publikováno v:
Materials Science Forum. :637-640
Doubly-implanted SiC vertical MOSFETs were fabricated displaying a blocking voltage of 4.2kV and a specific on-resistance of 23 mΩ-cm2, on a 4.5mm x 2.25mm device. Design variations on smaller (1.1mm x 1.1mm) devices showed on-resistance as low as 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5db7ab9197e8861ad77761a73181a3c
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
https://doi.org/10.4028/www.scientific.net/msf.679-680.637
Autor:
Jeff Nasadoski, Richard Alfred Beaupre, Rosa Ana Conte, Zachary Stum, Steve Arthur, Kevin Matocha, Ljubisa Dragoljub Stevanovic, Eladio Delgado, Keith Monaghan, J. L. Garrett, Peter Almern Losee, R. Ramakrishna Rao, Adam Gregory Pautsch
Publikováno v:
Materials Science Forum. :899-902
The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4a3d0f14730f3b893232145036bfc3
https://doi.org/10.4028/www.scientific.net/msf.615-617.899
https://doi.org/10.4028/www.scientific.net/msf.615-617.899
Autor:
Jesse B. Tucker, Ljubisa Dragoljub Stevanovic, Jeff Nasadoski, John Stanley Glaser, Steve Arthur, Michael Joseph Schutten, Kevin Matocha
Publikováno v:
Materials Science Forum. :819-822
SiC MOSFETs are characterized with a specific on-resistance of 8 m⋅cm2 at room temperature and a blocking voltage of 1500 V. Due to the negative shift in the threshold voltage, devices typically show a reduction in on-resistance with temperature. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c275ed2c9b47ff2e65c9a718d2c6fd
https://doi.org/10.4028/www.scientific.net/msf.556-557.819
https://doi.org/10.4028/www.scientific.net/msf.556-557.819
Autor:
David Dimitri Karipides, Michael Joseph Schutten, Jeff Nasadoski, Satish Prabhakaran, Robert James Thomas
Publikováno v:
2011 IEEE Vehicle Power and Propulsion Conference.
Design of electrical EMI filters requires an in-depth understanding of the desired frequency response. While low frequency filter performance (below 2–5 MHz) often matches the expected response, at higher frequencies the actual filter attenuation i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537fe19f90e88279b29320f75fe6625f
https://doi.org/10.1109/vppc.2011.6043242
https://doi.org/10.1109/vppc.2011.6043242
Autor:
Ljubisa Dragoljub Stevanovic, Steve Arthur, Kevin Matocha, Pete Losee, Jeff Nasadoski, John Stanley Glaser
Publikováno v:
2009 International Semiconductor Device Research Symposium.
Wide bandgap power devices made of silicon carbide (SiC) and gallium nitride (GaN) hold great promise over conventional silicon devices in the voltage range above 600V. These new material systems offer the hope of lower total losses than silicon MOSF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb6e6cafabcb47e712224bf5cf60ae65
https://doi.org/10.1109/isdrs.2009.5378062
https://doi.org/10.1109/isdrs.2009.5378062
