Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jeff Moussodji"'
Publikováno v:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, Feb 2019, San Francisco, SPIE, pp.12, 2019, ⟨10.1117/12.2504649⟩
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, Feb 2019, San Francisco, SPIE, pp.12, 2019, ⟨10.1117/12.2504649⟩
Laser grooving is a powerful method widely used in the semiconductor industry for chip singulation because of the advantages it provides, such as high grooves profile quality, lower mechanical stresses on devices. Nevertheless, challenges related to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b2622b4ed99cb5f9f25683bd17bee88
https://doi.org/10.1117/12.2504649
https://doi.org/10.1117/12.2504649
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, IEEE, pp.1396-1404, 2019, ⟨10.1109/ECTC.2019.00215⟩
2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, IEEE, pp.1396-1404, 2019, ⟨10.1109/ECTC.2019.00215⟩
The highly complex technology requirements of today's integrated circuits (ICs), lead to the increasingly use of several materials types such as metal structures, brittle dielectrics, porous low-k and ultra-low-k materials which are used in both fron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b58f940b6a6126a86af13dcebc593f0b
https://hal.archives-ouvertes.fr/hal-02453586
https://hal.archives-ouvertes.fr/hal-02453586
Autor:
Eric Duchesne, David Danovitch, Normand-Pierre Goodhue, Jeff Moussodji Moussodji, Benoit Papineau
Publikováno v:
Electronic Components & Packaging Conference (ECTC) 2018
Electronic Components & Packaging Conference (ECTC) 2018, May 2018, San Diego, United States
Electronic Components & Packaging Conference (ECTC) 2018, May 2018, San Diego, United States
This paper presents work undertaken to investigate a temporary carrier technique to control the warpage of an organic coreless substrate during a flip chip assembly process that exploits the higher throughput technique of mass reflow chip joining. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b97f31b8c56d4e4da613cb4e4bbc8160
https://doi.org/10.1109/ectc.2018.00110
https://doi.org/10.1109/ectc.2018.00110
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2014, 55 (3), pp.547-551. ⟨10.1016/j.microrel.2014.12.007⟩
Microelectronics Reliability, Elsevier, 2014, 55 (3), pp.547-551. ⟨10.1016/j.microrel.2014.12.007⟩
It has been demonstrated that high power devices like power diodes and IGBTs (Insulated Gate Bipolar Transistors) could remain functional after cross section. This has opened a field of possibilities for the characterization of distribution of physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::215b9a0ec2630bf62f6bc758ffa28cd7
https://doi.org/10.1016/j.microrel.2014.12.007
https://doi.org/10.1016/j.microrel.2014.12.007
Publikováno v:
European Journal of Electrical Engineering. 17:363-375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7646414e06c2880b985c506cc134bf9
https://doi.org/10.3166/ejee.17.363-375
https://doi.org/10.3166/ejee.17.363-375
Publikováno v:
Microelectronics Reliability. 53:1725-1729
A new distributed electro-thermal model has been developed in order to analyze electrical and thermal mappings of power devices during critical operations. The model is based on dividing power device into a vertical multilayer structure, with each la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd552f158c1371c6e552ab852d2b049
https://doi.org/10.1016/j.microrel.2013.07.089
https://doi.org/10.1016/j.microrel.2013.07.089
Publikováno v:
2015 IEEE Transportation Electrification Conference and Expo (ITEC).
The paper deals with the electric hybridization of a bow thruster for a river tugboat application. The knowledge gap leads to the full electrical retrofit of a previously high power hydraulic bow thruster system, in the objective of having more elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daac40349b7f87da0b6c1e55450c1531
https://doi.org/10.1109/itec.2015.7165811
https://doi.org/10.1109/itec.2015.7165811
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2014, 54 (10), pp. 1770-1773. ⟨10.1016/j.microrel.2014.07.149⟩
Microelectronics Reliability, Elsevier, 2014, 54 (10), pp. 1770-1773. ⟨10.1016/j.microrel.2014.07.149⟩
Micron-scale characterization of mechanical stress is essential for physic failure studies in power devices. We report the use of Raman spectroscopy to measure mechanical stress in silicon power devices with spatial resolutions down to 500 nm. μ-Ram
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::594dd5b54518af1731fb0def4fa0ac2b
https://hal.archives-ouvertes.fr/hal-01319285
https://hal.archives-ouvertes.fr/hal-01319285
Publikováno v:
European Conference on Power Electronics and Applications
European Conference on Power Electronics and Applications, Sep 2013, France. 9p
European Conference on Power Electronics and Applications, Sep 2013, France. 9p
A new electro-thermal model of a semiconductor device has been carried-out in order to investigate electrical and thermal mappings of power devices during critical operations. This model allows evaluating the effect of chip metallization ageing on te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f833983f5e159b37ddb34fce3d1c0ac
https://hal.archives-ouvertes.fr/hal-01056852
https://hal.archives-ouvertes.fr/hal-01056852
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (4), pp.576-578. ⟨10.1109/LED.2011.2182492⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (4), pp.576-578. ⟨10.1109/LED.2011.2182492⟩
International audience; For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45e87411eae4b090ee2b4f5167dc4e4c
https://hal.archives-ouvertes.fr/hal-00868892
https://hal.archives-ouvertes.fr/hal-00868892