Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Jeff McMurran"'
Autor:
Joong Hee Park, Yohan Choi, Ik Boum Hur, Jan Klikovits, Jeff McMurran, Henry Kamberian, Peter Hudek, Michal Jurkovic, Daniel Chalom, Young Ham, Michael Green, Brian Dillon, Bryan S. Kasprowicz
Publikováno v:
32nd European Mask and Lithography Conference.
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) result in st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f93cec2affca8fd6a22236215754455
https://doi.org/10.1117/12.2247941
https://doi.org/10.1117/12.2247941
Autor:
Mike Lung, Howard Lin, Young Ham, Michael Green, Richer Yang, Jeff McMurran, Yohan Choi, Andy Lan
Publikováno v:
SPIE Proceedings.
As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aaaf7c3504e12d8c843a79a0c1883f2
https://doi.org/10.1117/12.2248678
https://doi.org/10.1117/12.2248678
Autor:
Michal Jurkovic, Brian Dillon, Peter Hudek, Henry Kamberian, Young Ham, Yohan Choi, Jeff McMurran, Bryan S. Kasprowicz, Michael Green, Ik Boum Hur, Jan Klikovits, Joong Hee Park, Daniel Chalom
Publikováno v:
SPIE Proceedings.
As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67bf6177930309bbe74c63fcb5575b0f
https://doi.org/10.1117/12.2243407
https://doi.org/10.1117/12.2243407
Autor:
Peter Craig, Chun Chi Yu, Chain Ting Huang, William Chou, James Cheng, Julia Yu, J. K. Wu, Simon C. C. Hsu, Alex Tseng, Chuck Pollock, Young Ham, Chin Kuei Chang, N. T. Peng, Adder Lee, Jeffrey Cheng, Colbert Lu, Jeff McMurran
Publikováno v:
SPIE Proceedings.
According to the ITRS roadmap, semiconductor industry drives the 193nm lithography to its limits, using techniques like Double Pattern Technology (DPT), Source Mask Optimization (SMO) and Inverse Lithography Technology (ILT). In terms of considering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81cbb299dcd8b563820cf93c21fb9923
https://doi.org/10.1117/12.2196794
https://doi.org/10.1117/12.2196794
Publikováno v:
Journal of the American Chemical Society. 120:5233-5237
The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1),with a heterocyclic cyclooactane-like structure has been demonstrated. A single-crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6aac881004a3526520435bc1032699
https://doi.org/10.1021/ja980404f
https://doi.org/10.1021/ja980404f
Publikováno v:
Chemistry of Materials. 10:590-593
The synthesis, single-crystal X-ray structure, and decomposition reactions of new molecular precursors to amorphous C3N3P, a material analogous to C3N4, are described. These precursors, F2(C3N3)P(SiMe3)2 and Cl2(C3N3)P(SiMe3)2, are prepared via react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93cc40599d4f90836f69c2f24880880
https://doi.org/10.1021/cm9705799
https://doi.org/10.1021/cm9705799
Publikováno v:
ChemInform. 29
The synthesis of a novel tetrameric gallane, [HClGaN3]4 (1),with a heterocyclic cyclooactane-like structure has been demonstrated. A single-crystal X-ray study reveals that the molecule consists of eight-membered Ga4N4 rings with Ga atoms bridged by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7de62ee05adc12e6a6bdc648e33ee04
https://doi.org/10.1002/chin.199832024
https://doi.org/10.1002/chin.199832024
Autor:
Jeff McMurran, John Kouvetakis, Dingguo Dai, John L. Hubbard, Cory Steffek, K. Balasubramanian
Publikováno v:
ChemInform. 30
We describe the formation and properties of H2GaN3 (1), which is a very simple and stable molecular source for chemical vapor deposition (CVD) of GaN heterostructures. Compound 1 and the perdeutera...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1013d06a468e4f21322acabd5fcbd527
https://doi.org/10.1002/chin.199910014
https://doi.org/10.1002/chin.199910014
Autor:
Jeff McMurran, Brett Pleune, Arnold L. Rheingold, Thomas E. Concolino, John Kouvetakis, Cory Steffek
Publikováno v:
Inorganic Chemistry. 39:1615-1617
The synthesis and properties of the new indium inorganic azides Cl2InN3 and Br2InN3 and corresponding adducts with common Lewis bases such as tetrahydrofuran (THF) and pyridine are presented. The solid-state molecular structure of the Cl2InN3(THF)2 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e837e1369e2106cd51be6abd8cd250d5
https://doi.org/10.1021/ic990387a
https://doi.org/10.1021/ic990387a
Autor:
Maciej Rudzinski, Aditya Dayal, John Miller, Mark Wylie, Craig Wood, Dan Chalom, Gang Pan, Michael Green, Trent Hutchinson, Thomas Vavul, Shad Hedges, Jeff McMurran, Carl Hess
Publikováno v:
SPIE Proceedings.
The Critical Dimension Uniformity (CDU) specification on photomasks continues to decrease with each successive node. The ITRS roadmap for optical masks indicates that the CDU (3 sigma) for dense lines on binary or attenuated phase shift mask is 3.4nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee79e78870f42ff84d56e728eecd6c02
https://doi.org/10.1117/12.830148
https://doi.org/10.1117/12.830148