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pro vyhledávání: '"Jeff Marshman"'
Autor:
Yong Liu, Qingfeng Xing, Pal Pedersen, Jeff Marshman, Richard Mclaughlin, Warren E. Straszheim, Thomas A. Lograsso
Publikováno v:
Physical Review B. 93
We report how the superconducting phase forms in pseudo-single-crystal ${\mathrm{K}}_{x}\mathrm{F}{\mathrm{e}}_{2\ensuremath{-}y}\mathrm{S}{\mathrm{e}}_{2}$. In situ scanning electron microscopy (SEM) observation reveals that, as an order-disorder tr
Autor:
Lewis Stern, Samuel M. Nicaise, Vitor R. Manfrinato, John A. Notte, Jeff Marshman, Donald Winston, Huigao Duan, Lin Lee Cheong, David C. Ferranti, Karl K. Berggren, Shawn McVey
Publikováno v:
Nano Letters. 11:4343-4347
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using
Publikováno v:
Journal of Experimental Psychology: Learning, Memory, and Cognition. 35:1097-1103
Meta-analytic studies have concluded that although training improves spatial cognition in both sexes, the male advantage generally persists. However, because some studies run counter to this pattern, a closer examination of the anomaly is warranted.
Publikováno v:
SPIE Proceedings.
For Chrome binary masks, FIB defect repair has become increasingly challenging as feature sizes and exposure wavelengths are reduced. Chrome opaque defects are typically the most difficult to remove due to the lack of a highly effective gas chemistry
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
In this paper, we will be discussing the repair of 193 nm Molybdenum Silicide (MoSiON) phase-shift masks by Focused Ion Beam (FIB) technology. Development of a next generation FIB column has allowed greater resolution of photomask patterns enabling e