Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jeff Mackey"'
Autor:
Yayi Wei, Roger A. Nassar, Patrick P. Naulleau, Thomas Wallow, Bill Pierson, Harun H. Solak, Dario L. Goldfarb, Jeff Mackey, Chief-seng Koay, Kathleen Spear-Alfonso, Karen Petrillo, Robert L. Brainard, Robert Wood, Warren Montgomery, James W. Thakerlay
Publikováno v:
Journal of Photopolymer Science and Technology. 20:411-418
We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection, and acid diffusion length. Our standard high activation resist material, MET-2D (XP5271F), is capable of robust performance at CDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bbc31f1027a79c5242c34a7483ac59e
https://doi.org/10.2494/photopolymer.20.411
https://doi.org/10.2494/photopolymer.20.411
Initial experience establishing an EUV baseline lithography process for manufacturability assessment
Autor:
B. La Fontaine, Greg Denbeaux, Dario L. Goldfarb, Michael Tittnich, Tom Wallow, Robert L. Brainard, Yayi Wei, Warren Montgomery, Jeff Mackey, Patrick P. Naulleau, Sven Trogisch, Uzodinma Okoroanyanwu, Chiew-seng Koay, Frank Goodwin, D. Back, Kurt R. Kimmel, Obert R. Wood, Bill Pierson, John G. Hartley, Karen Petrillo, Brian Martinick
Publikováno v:
SPIE Proceedings.
The International Venture for Nanolithography (INVENT) initiative announced in mid 2005, a unique industry-university consortium between the College of Nanoscale Science and Engineering at Albany and a group of leading edge integrated device manufact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342fba540ad5fe2cdcd4520c15f8e90b
https://doi.org/10.1117/12.714016
https://doi.org/10.1117/12.714016
Autor:
Dario L. Goldfarb, Robert L. Brainard, Jeff Mackey, James W. Thackeray, Roger A. Nassar, Bill Pierson, Yayi Wei, Patrick P. Naulleau, Thomas Wallow, Harun H. Solak
Publikováno v:
SPIE Proceedings.
We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection. Our standard high activation resist material, MET-2D (XP5271F), is capable of robust performance at CDs in 40 nm regime and thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a86d4989b0de6fe483d52272c6ea20e
https://doi.org/10.1117/12.712981
https://doi.org/10.1117/12.712981
Autor:
W. Pierson, Jeff Mackey, Warren Montgomery, Karen Petrillo, Tom Wallow, Yayi Wei, Dario L. Goldfarb, Robert L. Brainard, Greg Denbeaux, Obert Wood, Chiew-seng Koay
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:2490
The International Technology Roadmap for Semiconductors (ITRS) insertion point of extreme ultraviolet (EUV) lithography is the 32nm half-pitch node, and significant worldwide effort is being focused toward this goal. Potential road blocks have been i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ce54de123c4e9537304069deccc96a
https://doi.org/10.1116/1.2787815
https://doi.org/10.1116/1.2787815