Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jeff LeClaire"'
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
In prior work, progress was shown in the systematic characterization of the process space for efficient and effective repair of extreme ultraviolet (EUV) photomasks using an ultrafast (femtosecond) pulsed deep ultraviolet (DUV) laser apparatus. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef628a487a19bff67ec31f2cd4a3a91
https://doi.org/10.1117/12.2601395
https://doi.org/10.1117/12.2601395
Publikováno v:
Photomask Technology 2020.
This publication is a continuation of a prior work on the process space available for the repair and localized cleaning of extreme ultraviolet lithography (EUVL) photomasks with the fpIII femto-pulsed deep ultraviolet (UV) repair tool. This next phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6559d673b9fe5531bfa4a9326c62cc
https://doi.org/10.1117/12.2573084
https://doi.org/10.1117/12.2573084
Autor:
Tod Robinson, Jeff LeClaire
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
In the last year, initial feasibility study results were published which showed that simulated fall-on particles and TEOS deposited pindot features could be removed with low-fluence femtosecond-pulsed laser repair processes with no detectable multi-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc7ce39be78acb5c042d3262addf0c2
https://doi.org/10.1117/12.2534759
https://doi.org/10.1117/12.2534759
Autor:
Jeff LeClaire, Tod Robinson
Publikováno v:
Photomask Technology 2018.
Deep ultraviolet (DUV) femtosecond laser repair of Cr binary and phase-shift photomasks is routine and well established over decades of practice. As Moore’s law progresses into sub-10 nm nodes, there is a necessary diversification of lithography te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3d84ffe5ee6fd914e4204d959cb98fa
https://doi.org/10.1117/12.2501408
https://doi.org/10.1117/12.2501408
Autor:
Tod Robinson, Jeff LeClaire
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
The specifications performance data for the latest generation system are compared to prior generations. These results are shown for both missing pattern (or hard) and unknown contamination (or soft) defects of various classifications in different pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70150b1bec258deac8ed1d1b9a16afa4
https://doi.org/10.1117/12.2325009
https://doi.org/10.1117/12.2325009
Autor:
Takeshi Isogawa, Kazunori Seki, Michael S. Hibbs, Mark Lawliss, Tod Robinson, Jeff LeClaire, Emily Gallagher
Publikováno v:
SPIE Proceedings.
Mask defectivity is a serious problem for all lithographic masks, but especially for EUV masks. Defects in the EUV blank are particularly challenging because their elimination is beyond control of the mask fab. If defects have been identified on a ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520625b2816f457dfdb86b5dfac8e0a4
https://doi.org/10.1117/12.2069787
https://doi.org/10.1117/12.2069787
Autor:
Jeff LeClaire, Gregory McIntyre, Emily Gallagher, Ronald Bozak, Tod Robinson, Roy White, Mark Lawliss
Publikováno v:
SPIE Proceedings.
Mask defectivity is often cited as a barrier to EUVL manufacturing, falling just behind low source power. Mask defectivity is a combination of intrinsic blank defects, defects introduced during the mask fabrication and defects introduced during the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe686d0336de1f722af196ccbf35a18
https://doi.org/10.1117/12.974749
https://doi.org/10.1117/12.974749
Autor:
Daniel Yi, Ron Bozak, Michael Archuletta, David Brinkley, Tod Robinson, Jeff LeClaire, Roy White
Publikováno v:
SPIE Proceedings.
The technology to selectively remove nanoparticles from a photomask surface by adhering it to an AFM tip (BitClean) first introduced with the Merlin ® nanomachining mask repair platform has been successfully integrated in numerous mask house product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35778f004177bf0f81983e933de0375d
https://doi.org/10.1117/12.964959
https://doi.org/10.1117/12.964959
Autor:
David A. Lee, Alexander M. Figliolini, Roy White, Jeff LeClaire, David Brinkley, David Doerr, Michael Archuletta, Ron Bozak
Publikováno v:
SPIE Proceedings.
The haze nucleation and growth phenomenon on critical photomask surfaces has periodically gained attention as it has significantly impacted wafer printability for different technology nodes over the years. A number of process solutions have been show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd1e9858c2637caddcb26643528206f
https://doi.org/10.1117/12.918378
https://doi.org/10.1117/12.918378
Autor:
Tod Robinson, Jeff LeClaire, Ron Bozak, Roy White, F. G. Tsai, Jiin-Hong Lin, C. Y. Chen, Mike Archuletta, Daniel Yi
Publikováno v:
SPIE Proceedings.
A number of new technologies and processes have been developed for deep ultraviolet (DUV) wavelength and femtosecond pulsed laser repair of photomasks. These advances have been shown to improve and extend the repair of both pelliclized and non-pellic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d0e9aae721e45af009478da6bcf1c09
https://doi.org/10.1117/12.898502
https://doi.org/10.1117/12.898502