Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jeff Krotine"'
Publikováno v:
ECS Transactions. 1:135-147
Polymers based on norbornene have been used for low-k dielectric materials, advanced photoresists, and as sacrificial materials in the formation buried air-gaps. In this study, the hardness of thin films of butylpolynorbornene - triethoxysilylpolynor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71074c048a1162d4cd5512627fc7a286
https://doi.org/10.1149/1.2218485
https://doi.org/10.1149/1.2218485
Publikováno v:
Journal of Electronic Materials. 35:1112-1121
Polymers based on norbornene have been used for low-k dielectric materials, advanced photoresists, and as sacrificial materials in the formation buried air-gaps. In this study, the hardness of thin films of butylpolynorbornene-triethoxysilylpolynorbo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c87ebb58bcbedb464fac516436a7b2
https://doi.org/10.1007/bf02692574
https://doi.org/10.1007/bf02692574
Autor:
Wanli Li, Lei Chen, James C. Sturm, Robert H. Austin, Jonas O. Tegenfeldt, Jeff Krotine, Paul A. Kohl, Stephen Y. Chou
Publikováno v:
Nanotechnology. 14:578-583
Chip based bio/chemical analysis relies on networks of fluidic channels that are connected to reaction chambers and sensors. For sensitive detection it is important to scale down the size of the channels so that they approach the relevant length scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::970f699394a2998cb9e4e5e025601570
https://doi.org/10.1088/0957-4484/14/6/302
https://doi.org/10.1088/0957-4484/14/6/302
Publikováno v:
2006 11th International Symposium on Advanced Packaging Materials: Processes, Properties and Interface.
As the minimum feature size of integrated circuits decreases, the need for ultra low-k dielectrics with copper metal increasing in order to reduce the RC delay, energy dissipation, and cross talk caused by the copper interconnects. The ITRS presents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce6a34ab24027c4dbbb4c98f63c852f
https://doi.org/10.1109/isapm.2006.1666015
https://doi.org/10.1109/isapm.2006.1666015
Publikováno v:
MRS Proceedings. 622
We report preliminary electrical and diffusion barrier characteristics of Ti (100nm)/TaSi2 (200nm)/Pt (300nm) thermally stable ohmic contact metallization on n-type 6H-SiC epilayers. These contacts exhibited linear ohmic characteristics with contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce134bcad1ab381ea11e41b6e469a66
https://doi.org/10.1557/proc-622-t8.3.1
https://doi.org/10.1557/proc-622-t8.3.1
Publikováno v:
ECS Meeting Abstracts. :596-596
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474021b1dc156a59d1449e50540e6bcc
https://doi.org/10.1149/ma2005-02/14/596
https://doi.org/10.1149/ma2005-02/14/596