Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jeff J. Ye"'
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6b0ccdeec9b5970ef7faf10afa5c95
https://doi.org/10.1109/asmc57536.2023.10121149
https://doi.org/10.1109/asmc57536.2023.10121149
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83debdfeff809fa46837c17bb90ca32
https://doi.org/10.1109/asmc57536.2023.10121087
https://doi.org/10.1109/asmc57536.2023.10121087
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b377d41fbe1119a55c1ed25520a7a49d
https://doi.org/10.1109/asmc57536.2023.10121134
https://doi.org/10.1109/asmc57536.2023.10121134
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75881c2093ea23af9b85284723f1dd2
https://doi.org/10.1109/asmc54647.2022.9792483
https://doi.org/10.1109/asmc54647.2022.9792483
Autor:
Tom Esry, Doug Chafe, Ketan Deshpande, Benjamin B. Ye, Gopal Reddy, Daniel Fedor, Jeff J. Ye, Jing Nie
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Both line width roughness (LWR) and queue time (Q-time) have attracted attention in the high-volume manufacturing (HVM). In this paper, we will present the results for the effect of HBr cure process on LWR in pitch doubling process with fluorine-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e3174feb3e69eaabd27b1be2d773e4
https://doi.org/10.1109/asmc51741.2021.9435718
https://doi.org/10.1109/asmc51741.2021.9435718
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Unexpected yield loss in high-volume DRAM manufacturing occurs very often as an excursion in critical levels such as high aspect ratio container (HARC) etch in capacitor formation in the device. The main failure mode is polymer formation and plasma d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0323c6a2c3241c56c4828955012701
https://doi.org/10.1109/asmc.2015.7164461
https://doi.org/10.1109/asmc.2015.7164461