Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Jeff Hebb"'
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
The improvement of device performance associated with the intentional manipulation of stresses on the transistor scale is an integral part of device fabrication at advanced technology nodes. However, comparatively little attention is given to stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4303712c58c61a097c879ca46f8452
https://doi.org/10.1109/asmc.2011.5898171
https://doi.org/10.1109/asmc.2011.5898171
Autor:
Rainer Giedigkeit, Stephan Waidmann, Inka Richter, Hartmut Prinz, Van Le, Kornelia Dittmar, David M. Owen, Jeff Hebb, Shrinivas Shetty, Yun Wang, Robert Binder, M. Weisheit
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Advanced millisecond annealing technologies are being implemented to enable scaling of silicidation of Ni for contacts. There are several aspects of the millisecond annealing process that must be optimized in order to minimize defects and improve yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec461c87d32a3339eb17bbf436eff09a
https://doi.org/10.1109/rtp.2010.5623798
https://doi.org/10.1109/rtp.2010.5623798
Autor:
Van Le, Shrinivas Shetty, Kornelia Dittmar, Jeff Hebb, Rainer Giedigkeit, Inka Richter, M. Weisheit, Stephan Waidmann, Jeffrey Mileham, Yun Wang, Hartmut Prinz, Robert Binder, Dave Owen
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6a5ec4c0b2af9271e3835118c49f22
https://doi.org/10.1109/rtp.2010.5623800
https://doi.org/10.1109/rtp.2010.5623800
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a single narrow laser beam is used to heat the wafer surface from substrate tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72527875ef7b47af19f6b9ea9fb350f7
https://doi.org/10.1109/iwjt.2010.5474998
https://doi.org/10.1109/iwjt.2010.5474998
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
Ultra shallow junctions are increasingly important to overcome short channel effects, and sub-millisecond annealing offers the ability to control diffusion while simultaneously offering high activation levels. The ultra-fast annealing process needs t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87da2d41369eb75d89d243eaf5081430
https://doi.org/10.1109/rtp.2009.5373421
https://doi.org/10.1109/rtp.2009.5373421
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
The performance improvement associated with the intentional manipulation of stresses on the transistor scale is an integral part of device fabrication at advanced technology nodes. However, comparatively little attention is given to stress management
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb454a6fdc0e6b8959df36730bae141
https://doi.org/10.1109/rtp.2009.5373427
https://doi.org/10.1109/rtp.2009.5373427
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
LSA was first introduced into mainstream semiconductor manufacturing for logic IC's at the 65nm node, continuing the natural evolution of semiconductor thermal processing to higher temperatures (>1200°C) and shorter times (100's of microseconds). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51b9e538c03c3da94134376a14d2b6e5
https://doi.org/10.1109/rtp.2009.5373481
https://doi.org/10.1109/rtp.2009.5373481
Publikováno v:
2009 International Workshop on Junction Technology.
The use of strained SiGe is essential to improvement in device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e960c2e2a1d0fc6b2cb9fb15f851f0e
https://doi.org/10.1109/iwjt.2009.5166234
https://doi.org/10.1109/iwjt.2009.5166234
Publikováno v:
2009 International Workshop on Junction Technology.
Advanced technology nodes are increasingly dependent on strain engineering to achieve the performance targets. However, processes throughout device fabrication have the potential to inadvertently relax or modify the stress. The relative importance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd65ec6118a0232feab0d29889b2641
https://doi.org/10.1109/iwjt.2009.5166208
https://doi.org/10.1109/iwjt.2009.5166208
Autor:
Michael Shen, Andy Hawryluk, Senquan Zhou, Xiaoru Wang, Yun Wang, Shaoyin Chen, Jeff Hebb, David M. Owen
Publikováno v:
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineering—creating highly activated ultra-shallow junctions with near diffusion-less boundaries. These produce higher performing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b848436cebe94b27f000041c2bb13b3
https://doi.org/10.1109/rtp.2008.4690538
https://doi.org/10.1109/rtp.2008.4690538