Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jeff Hawthorne"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:315-318
In this paper we discuss the detection, investigation and remediation of a silicon pitting defect in gate oxide patterning processes. The pitting defect is detected by optical inspection after an oxide wet etch operation. The cause of the physical de
Publikováno v:
Solid State Phenomena. :109-112
The monitoring and optimization of wet clean and surface preparation processes is a major challenge in the microelectronics industry [1, 2]. Today, the main methods used in clean rooms are visual inspection by light scattering (principally applied to
Publikováno v:
Solid State Phenomena. 134:289-292
Autor:
David L. Freeman, Jeff Hawthorne
Publikováno v:
SID Symposium Digest of Technical Papers. 31:375-377
In the later half of 2000, display manufacturers will begin mass producing displays with resolutions from 150 to 200 pixels/in. These displays will have a color sub-pixel pitch of from 42 to 56 mm. For array inspection and test equipment, reduced pix
Publikováno v:
ECS Meeting Abstracts. :784-784
not Available.
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