Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeff Gengler"'
Publikováno v:
BCICTS
This paper presents a three-stage Ka-band Doherty power amplifier fabricated using 0.15 μm GaN-on-SiC HEMT technology. Peak-power greater than 8-watts, 30 dB of small-signal gain, and over 20% of PAE at 6 dB output back-off has been achieved for 27
Autor:
Adnan Raza, Jeff Gengler
Publikováno v:
2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).
This paper describes an Inverse Class-F single-ended wideband GaN HEMT space-saving power amplifier covering 100 MHz to 1000 MHz frequency range. The simulated, assembled and characterized amplifier delivers an average P3dB of 110W and Drain Efficien
Publikováno v:
2018 IEEE 19th Wireless and Microwave Technology Conference (WAMICON).
In this article, a method for measurement and extraction of temperature-dependent X-Parameter (polyharmonic distortion, or PHD) models from high power RF and microwave power amplifiers for use in circuit and system level simulation is discussed in so
Autor:
Jeff Gengler, Adnan Raza
Publikováno v:
2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).
This paper describes a single-ended wideband GaN HEMT space-saving power amplifier covering 100 MHz to 1000 MHz frequency range. The simulated, assembled and characterized amplifier delivers P3dB of 70W with Drain Efficiency of 60% across a decade, w
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25um GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω out
Autor:
Tammy Ho, Jeff Gengler
Publikováno v:
2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS).
The application of GaN devices for high power amplifiers is rapidly growing and changing the base station market. This paper presents two different symmetrical Doherty amplifier solutions using two of the same wideband 10 W GaN discrete transistors f
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Autor:
Thomas Landon, Roger Branson, Gary Burgin, Jeff Dekosky, Joe Delaney, Jeff Gengler, Rached Hajji, Arwyn Roberts
Publikováno v:
2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
This paper describes TriQuint's platform product offering for the emerging pico-cell base station market. The TGA2450 is a highly integrated 50 ohm in/out power amplifier module that offers high efficiency performance in a small form factor. TGA2450