Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jeesoo Chang"'
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107619- (2024)
Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using
Externí odkaz:
https://doaj.org/article/8655bf3bb8824097a3f9db107fcc0cb3
Autor:
Yeji Lee, Wonyeong Jang, Kyungbae Kwon, Jihun Park, Changhyun Yoo, Jeesoo Chang, Jongwook Jeon
Publikováno v:
IEEE Access, Vol 10, Pp 80695-80702 (2022)
With the continuous development of front-end-of-line (FEOL) technology, the development of interconnection processes at nanoscale process nodes is becoming important. We conducted a post-layout circuit simulation to consider the effect of parasitic R
Externí odkaz:
https://doaj.org/article/48d734e66ac04f62aec99361e5db6049
Autor:
Hanggyo Jung, Jeesoo Chang, Changhyun Yoo, Jooyoung Oh, Sumin Choi, Juyeong Song, Jongwook Jeon
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 4096 (2022)
In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this,
Externí odkaz:
https://doaj.org/article/d894d6f01cfb4599a9fac0da65e49c24
Autor:
Sungmin Hwang, Jeesoo Chang, Min-Hye Oh, Kyung Kyu Min, Taejin Jang, Kyungchul Park, Junsu Yu, Jong-Ho Lee, Byung-Gook Park
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
Spiking neural networks (SNNs) have attracted many researchers’ interests due to its biological plausibility and event-driven characteristic. In particular, recently, many studies on high-performance SNNs comparable to the conventional analog-value
Externí odkaz:
https://doaj.org/article/7444fdcf89a74c69a90ca3263c035b2d
Publikováno v:
Nanomaterials, Vol 12, Iss 4, p 591 (2022)
In this study on multi-nanosheet field-effect transistor (mNS-FET)—one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension—3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage fr
Externí odkaz:
https://doaj.org/article/5397670850824c41a69757fd99afba98
Autor:
Jeesoo Chang, Sungmin Hwang, Kyungchul Park, Taejin Jang, Kyung-Kyu Min, Min-Hye Oh, Jonghyuk Park, Jong-Ho Lee, Byung-Gook Park
Publikováno v:
Applied Sciences, Vol 11, Iss 9, p 4155 (2021)
A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the dir
Externí odkaz:
https://doaj.org/article/56135bb689c94aca879651a366f3b023
Autor:
Taejin Jang, Suhyeon Kim, Jeesoo Chang, Kyung Kyu Min, Sungmin Hwang, Kyungchul Park, Jong-Ho Lee, Byung-Gook Park
Publikováno v:
Micromachines, Vol 11, Iss 9, p 829 (2020)
NOR/AND flash memory was studied in neuromorphic systems to perform vector-by-matrix multiplication (VMM) by summing the current. Because the size of NOR/AND cells exceeds those of other memristor synaptic devices, we proposed a 3D AND-type stacked a
Externí odkaz:
https://doaj.org/article/86ff05fe850943f6a3427b901aee190a
Publikováno v:
ACS Applied Electronic Materials. 5:2239-2248
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7270579ba7f09f55d47cb2a7918a7c26
https://doi.org/10.1021/acsaelm.3c00096
https://doi.org/10.1021/acsaelm.3c00096
Autor:
Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim
Publikováno v:
IEEE Electron Device Letters. 43:549-552
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab56b051f1a7e92f220a77f46c86193
https://doi.org/10.1109/led.2022.3149029
https://doi.org/10.1109/led.2022.3149029
Publikováno v:
IEEE Transactions on Electron Devices. 69:1524-1531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac109abc816bde2638b7c5ac3bf4250
https://doi.org/10.1109/ted.2022.3141327
https://doi.org/10.1109/ted.2022.3141327