Zobrazeno 1 - 6 of 6 pro vyhledávání: '"Jeanne Becdelievre"'
1
Growing self-assisted GaAs nanowires up to 80
Autor: Jeanne, Becdelievre, Xin, Guan, I, Dudko, Philippe, Regreny, Nicolas, Chauvin, Gilles, Patriarche, Michel, Gendry, Alexandre, Danescu, José, Penuelas
Publikováno v: Nanotechnology. 34(4)
Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor-liquid-solid method. In this ultralong regime we show the existence of two features concerning the growth kinetic and the structural properties. Firstly, we observed a non-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::a380312652242153ede6a973998e2963
https://pubmed.ncbi.nlm.nih.gov/36270200
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2
Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy
Autor: Jeanne Becdelievre, Xin Guan, I Dudko, Philippe Regreny, Nicolas Chauvin, Gilles Patriarche, Michel Gendry, Alexandre Danescu, José Penuelas
Publikováno v: Nanotechnology. 34:045603
Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor–liquid–solid method. In this ultralong regime we show the existence of two features concerning the growth kinetic and the structural properties. Firstly, we observed a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1c592e0e63b2ccbf0de131d34a085da
https://doi.org/10.1088/1361-6528/ac9c6b
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3
GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy
Autor: Nicolas Chauvin, Jose Penuelas, Nicholas Blanchard, Fausto Sirotti, Philippe Regreny, Geneviève Grenet, Jeanne Becdelievre, Claude Botella, Xin Guan, Romain Bachelet, Guillaume Saint-Girons, Michel Gendry, Benjamin Meunier, X. Jaurand, A. Benali, Mathieu G. Silly
Publikováno v: Nano Letters
Nano Letters, American Chemical Society, 2016, 16 (4), pp.2393-2399. ⟨10.1021/acs.nanolett.5b05182⟩
We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an ars
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1674d6343c205656a7a82ab49dd3a47
https://doi.org/10.1021/acs.nanolett.5b05182
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4
GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell
Autor: A. Benali, X. Jaurand, Xin Guan, Nicolas Chauvin, Geneviève Grenet, Michel Gendry, Romain Bachelet, Nicholas Blanchard, Jose Penuelas, Philippe Regreny, Guillaume Saint-Girons, Jeanne Becdelievre, Claude Botella
Publikováno v: Nanoscale
Nanoscale, Royal Society of Chemistry, 2016, 8, pp.15637. ⟨10.1039/C6NR04817J⟩
International audience; We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aeb01ec858264b3d47cd88392c8cb248
https://pubmed.ncbi.nlm.nih.gov/27513669
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