Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Jean-Roch Vaillé"'
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1746-1753. ⟨10.1109/TNS.2021.3071583⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1746-1753. ⟨10.1109/TNS.2021.3071583⟩
International audience; The Timepix chip has been exposed to the outer space for the first time with the SATRAM (Space Application of Timepix-based Radiation Monitor) instrument on Proba-V (Project for On-Board Autonomy Vegetation), a European Space
Autor:
P. Bourdoux, Jean-Roch Vaillé, J. Carron, L. Nguyen, D. Falguere, Julien Mekki, M. Ruffenach, S. Bourdarie
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, pp.1-9. ⟨10.1109/TNS.2020.2965546⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, pp.1-9. ⟨10.1109/TNS.2020.2965546⟩
International audience; CNES and ONERA have developed a radiation monitor ICARE-NG (Influence sur les Composants Avancés des Radiations de l'Espace-Nouvelle Génération) to measure protons and electrons in radiation belts. This instrument is able t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80f0a20053bd0bafb101de2b40642101
https://hal.archives-ouvertes.fr/hal-02470369
https://hal.archives-ouvertes.fr/hal-02470369
Autor:
M. Bernard, A. Masi, P. Peronnard, Laurent Dusseau, Jean-Roch Vaillé, Salvatore Danzeca, A. Merlenghi, E. Chesta, R. Secondo, Markus Brugger, R. Garcia Alia
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (8), pp.1694-1699. ⟨10.1109/TNS.2018.2797319⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (8), pp.1694-1699. ⟨10.1109/TNS.2018.2797319⟩
A CubeSat payload (PL) was designed at CERN and at the University Space Center of Montpellier, for the measurement of radiation and its effects on electronics and single event latchup recording on SRAM devices. The PL and the data handling modules we
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (7), pp.1753-1760. ⟨10.1109/TNS.2019.2897159⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (7), pp.1753-1760. ⟨10.1109/TNS.2019.2897159⟩
The Influence sur les Composants Avances des Radiations de l’Espace-Nouvelle Generation (ICARE-NG) instrument onboard the Argentinian satellite Satelite de Aplicaciones Cientificas-D (SAC-D) detected much more protons during descending orbits (when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e98887232e120cb916323f7634ce1db
https://hal.archives-ouvertes.fr/hal-02315268/document
https://hal.archives-ouvertes.fr/hal-02315268/document
Autor:
R. Marec, N. J-H. Roche, A. Privat, Jean-Roch Vaillé, Laurent Dusseau, B. Azais, G. Auriel, Frédéric Saigné, Francoise Bezerra, P. Calvel, Fabien Roig, Jerome Boch, P. Ribeiro, Robert Ecoffet
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3043-3049
The synergistic effect between displacement damage dose (DDD) and analog transient radiation effects on electronics (ATREE) in an operational amplifier (LM124) (opamp) from three different manufacturers is investigated. Pulsed X-ray experiments have
Autor:
A. Privat, Jerome Boch, Frédéric Saigné, Jean-Roch Vaillé, R. Marec, Laurent Dusseau, Francoise Bezerra, B. Azais, Nicolas Roche, G. Auriel, Fabien Roig, P. Ribeiro, Robert Ecoffet, P. Calvel
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6), pp.3201-3209. ⟨10.1109/TNS.2014.2369347⟩
50th IEEE Nuclear Space and Radiation Effects Conference
50th IEEE Nuclear Space and Radiation Effects Conference, 2014, Paris, France
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3201-3209. ⟨10.1109/TNS.2014.2369347⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6), pp.3201-3209. ⟨10.1109/TNS.2014.2369347⟩
50th IEEE Nuclear Space and Radiation Effects Conference
50th IEEE Nuclear Space and Radiation Effects Conference, 2014, Paris, France
IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.3201-3209. ⟨10.1109/TNS.2014.2369347⟩
The influence of external circuit designs on ASET shapes in a high speed current feedback amplifier (CFA) (AD844) is investigated by means of the pulsed laser single event effect (PLSEE) simulation technique. Changes of the feedback resistors modify
Autor:
R. Garcia Alia, E. Chesta, A. Merlenghi, Jean-Roch Vaillé, Salvatore Danzeca, A. Masi, Laurent Dusseau, X. Laurand, P. Peronnard, Markus Brugger, R. Secondo, M. Bernard
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The qualification process of CubeSat systems under radiation is long and requires tests at several facilities. An alternative qualification methodology is being studied at the CHARM facility with the CELESTA radiation module demonstrator.
Publikováno v:
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2017
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2017, 2017, Bordeaux, France
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.650-654. ⟨10.1016/j.microrel.2017.07.028⟩
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2017, 2017, Bordeaux, France
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.650-654. ⟨10.1016/j.microrel.2017.07.028⟩
This paper presents a methodology for analysing two-photon absorption laser testing results in the frequency domain rather than with the classical mapping approach. We experimentally demonstrate, on a 28 nm device, the extraction of subwavelength dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b63c62bd6b77d3a026b31d55d4c13ac
https://hal.archives-ouvertes.fr/hal-01929245
https://hal.archives-ouvertes.fr/hal-01929245
Autor:
R. Garcia Alia, Salvatore Danzeca, Jean-Roch Vaillé, Laurent Dusseau, A. Masi, R. Secondo, Markus Brugger, P. Peronnard, A. Merlenghi
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, 64 (8), pp.2107-2114. ⟨10.1109/TNS.2017.2691403⟩
IEEE Trans.Nucl.Sci.
IEEE Trans.Nucl.Sci., 2017, 64 (8), pp.2107-2114. ⟨10.1109/TNS.2017.2691403⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, 64 (8), pp.2107-2114. ⟨10.1109/TNS.2017.2691403⟩
IEEE Trans.Nucl.Sci.
IEEE Trans.Nucl.Sci., 2017, 64 (8), pp.2107-2114. ⟨10.1109/TNS.2017.2691403⟩
International audience; A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e265e2ed7264bc83627c2f9fbfd3e6c0
https://hal.archives-ouvertes.fr/hal-01757856
https://hal.archives-ouvertes.fr/hal-01757856
Autor:
Jerome Boch, K. Guetarni, Frédéric Saigné, Jean-Roch Vaillé, A. Michez, L. L. Foro, A. Privat, Antoine Touboul
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1293-1299. ⟨10.1016/j.microrel.2013.07.108⟩
Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1293-1299. ⟨10.1016/j.microrel.2013.07.108⟩
In atmospheric environment, neutron-induced single event effects are known to be a concern for electronic devices reliability. The effect of atmospheric radiation on integrated technologies (mainly single event upsets and latchup on CMOS) has been ex