Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Jean-Roch Huntzinger"'
Autor:
Felipe Wasem Klein, Jean-Roch Huntzinger, Vincent Astié, Damien Voiry, Romain Parret, Houssine Makhlouf, Sandrine Juillaguet, Jean-Manuel Decams, Sylvie Contreras, Périne Landois, Ahmed-Azmi Zahab, Jean-Louis Sauvajol, Matthieu Paillet
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 279-296 (2024)
Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thic
Externí odkaz:
https://doaj.org/article/3677c87bfc5c47bda87bbc0b0dce2c8d
Autor:
Ilan Boulet, Simon Pascal, Frederic Bedu, Igor Ozerov, Alain Ranguis, Thomas Leoni, Conrad Becker, Laurence Masson, Aleksandar Matkovic, Christian Teichert, Olivier Siri, Claudio Attaccalite, Jean-Roch Huntzinger, Matthieu Paillet, Ahmed Zahab, Romain Parret
Publikováno v:
Nanoscale Advances
Nanoscale Advances, 2023, 5, pp.1681-1690. ⟨10.1039/d2na00817c⟩
Nanoscale Advances, 2023, 5, pp.1681-1690. ⟨10.1039/d2na00817c⟩
International audience; Hybrid van der Waals heterostructures made of 2D materials and organic molecules exploit the high sensitivity of 2D materials to all interfacial modifications and the inherent versatility of the organic compounds. In this stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0386c50a53dac1f217f6b1f6424666a3
https://doi.org/10.1039/d2na00817c
https://doi.org/10.1039/d2na00817c
Autor:
Tianlin Wang, Maxime Bayle, Matthieu Paillet, Jean-Manuel Decams, Christophe Roblin, Ahmed Azmi Zahab, Jean-Roch Huntzinger, Perine Landois, Sylvie Contreras
Publikováno v:
Carbon
Carbon, 2020, 163, pp.224-233. ⟨10.1016/j.carbon.2020.03.027⟩
Carbon, Elsevier, 2020, ⟨10.1016/j.carbon.2020.03.027⟩
Carbon, 2020, 163, pp.224-233. ⟨10.1016/j.carbon.2020.03.027⟩
Carbon, Elsevier, 2020, ⟨10.1016/j.carbon.2020.03.027⟩
International audience; The so-called buffer layer (BL) is a carbon rich reconstructed layer formed during the sublimation of SiC (0001). The existence of covalent bonds between some of the carbon atoms in this layer and the underlying silicon atoms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5166fc357d8cb1debd6fabb93cfa7d42
https://hal.archives-ouvertes.fr/hal-03034438/document
https://hal.archives-ouvertes.fr/hal-03034438/document
Autor:
Tianlin Wang, Jean-Roch Huntzinger, Jean-Manuel Decams, Maxime Bayle, Ahmed Azmi Zahab, Benoit Jouault, sylvie contreras, Matthieu Paillet, Perine Landois
Publikováno v:
2D materials on substrates: growth & properties
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
HAL
2D materials on substrates: growth & properties, Jan 2020, Villard de Lans, France
HAL
Since 2008, epitaxial graphene growth has been developed in terms of homogeneity and scale by using a 1 ATM argon pressure at high temperature (>1650°C). Until now, it still remains challenging to obtain films with different and controlled character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::252561540c689cb9f6436e1e8d1ed1fb
https://hal.archives-ouvertes.fr/hal-03040807
https://hal.archives-ouvertes.fr/hal-03040807
Autor:
Ahmad Bakaraki, Luc Henrard, Jean-Roch Huntzinger, Maxime Bayle, Matthieu Paillet, Jean-François Colomer, Ahmed Azmi Zahab, Alexandre Felten, Nicolas Reckinger, Jean-Louis Sauvajol, Perine Landois
Publikováno v:
physica status solidi (b). 252:2375-2379
Few-layer graphene (FLG) samples prepared by two methods (chemical vapor deposition (CVD) followed by transfer onto SiO2/Si substrate and mechanical exfoliation) are characterized by combined optical contrast and micro-Raman mapping experiments. We e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2511af2dd5b121d83747a5c816828a11
https://doi.org/10.1002/pssb.201552204
https://doi.org/10.1002/pssb.201552204
Autor:
Tianlin Wang, Perine Landois, Maxime Bayle, Jean-Roch Huntzinger, Alessandro de Cecco, Clemens Winkelmann, Matthieu Paillet, Benoit Jouault, sylvie contreras
Publikováno v:
GDR-I Graphene and co Annual meeting 2017
GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
HAL
GDR-I Graphene and co Annual meeting 2017, Oct 2017, Aussois, France
HAL
International audience; Thermal decomposition of silicon carbide (SiC) provides transfer free and wafer-scale homogeneous graphene forming on a semi-insulating substrate. Large-area monolayer graphene growth was initially developed at the atmospheric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6847fdf1fe41943bb103037c2c5f4445
https://hal.archives-ouvertes.fr/hal-01924058
https://hal.archives-ouvertes.fr/hal-01924058
Autor:
Thierry Chassagne, Pierre Muller, Stéphane Vézian, Marcin Zielinski, Jean Roch Huntzinger, Adrien Michon, Marc Portail, Ludovic Largeau, Antoine Tiberj, Denis Lefebvre, Fabien Cheynis, Olivia Mauguin, Frédéric Leroy
Publikováno v:
Silicon Carbide and Related Materials 2012
Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Petersburg, Russia. pp.117-120, ⟨10.4028/www.scientific.net/MSF.740-742.117⟩
Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Petersburg, Russia. pp.117-120, ⟨10.4028/www.scientific.net/MSF.740-742.117⟩
We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3fcc01beb0ca0c7a903d12b64e98223
https://doi.org/10.4028/www.scientific.net/msf.740-742.117
https://doi.org/10.4028/www.scientific.net/msf.740-742.117
Autor:
Matthieu Paillet, Antoine Tiberj, Jean-Roch Huntzinger, Ahmed Azmi Zahab, Denise Nakabayashi, Thierry Michel, Romain Parret, Jean-Louis Sauvajol
Publikováno v:
ACS Nano
ACS Nano, American Chemical Society, 2013, 7 (1), pp.165. ⟨10.1021/nn3048878⟩
ACS Nano, American Chemical Society, 2013, 7 (1), pp.165. ⟨10.1021/nn3048878⟩
International audience; We report in situ Raman scattering experiments on single-layer graphene (SLG) and Bernal bilayer graphene (BLG) during exposure to rubidium vapor. The G- and 2D-band evolutions with doping time are presented and analyzed. On S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a38283f4a415d6d886497eecaf44012
https://doi.org/10.1021/nn3048878
https://doi.org/10.1021/nn3048878
Autor:
Valentin N. Popov, Jean-Christophe Blancon, Raul Arenal, Fabrice Vallée, Ahmed Zahab, Anthony Ayari, Matthieu Paillet, Huy-Nam Tran, N. Del Fatti, Alfonso San-Miguel, J.L. Sauvajol, Jean-Roch Huntzinger
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94, pp.075430. ⟨10.1103/PhysRevB.94.075430⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2016, 94, pp.075430. ⟨10.1103/PhysRevB.94.075430⟩
We examine the excitonic nature of the ${E}_{33}$ optical transition of the individual free-standing index-identified $(23,7)$ single-walled carbon nanotube by means of the measurements of its radial-breathing-mode and $G$-mode Raman excitation profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5df046ca60e66bfd782c6a62749bf1e4
https://doi.org/10.1103/physrevb.94.075430
https://doi.org/10.1103/physrevb.94.075430
Autor:
D. Rouchon, Gérard Lapertot, Bijandra Kumar, C. Vergnaud, Ahmed Zahab, M. Baraket, Jean-Roch Huntzinger, Matthieu Paillet, Matthieu Jamet, Loic Dubois, Laurent Vila, F. Lefloch, Antoine Tiberj, A. G. M. Jansen, J.L. Sauvajol, Florence Duclairoir, M. Cubuku
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2016, 75, pp.7-14. ⟨10.1016/j.physe.2015.07.022⟩
Physica E: Low-dimensional Systems and Nanostructures, 2016, 75, pp.7-14. ⟨10.1016/j.physe.2015.07.022⟩
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2016, 75, pp.7-14. ⟨10.1016/j.physe.2015.07.022⟩
Physica E: Low-dimensional Systems and Nanostructures, 2016, 75, pp.7-14. ⟨10.1016/j.physe.2015.07.022⟩
The epitaxial growth of graphene by the sublimation of Si-terminated silicon carbide (SiC) is studied inside a graphite enclosure in a radio-frequency furnace by comparing different in situ processes involving hydrogen etching or not and different gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2475c242160d3296a1ec52a968f64887
https://hal.archives-ouvertes.fr/hal-01614018
https://hal.archives-ouvertes.fr/hal-01614018