Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jean-Pierre Panabiere"'
Publikováno v:
Microelectronic Engineering. 17:275-278
This paper shows that pattern profile abnormalities appear when three component negative resists are deposited onto an aluminium substrate. Because of the amphotere behavior of aluminium, the acid molecules react when they come in contact with the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af1a849ebca1389487a21a3c51fcc9c4
https://doi.org/10.1016/0167-9317(92)90055-v
https://doi.org/10.1016/0167-9317(92)90055-v
Publikováno v:
Microelectronic Engineering. 13:173-176
The Double Exposure (DE) process simply consists in performing an optical blanket exposure of the resist before or after the E-beam exposure. This paper addresses the basic principle of the DE process, the required experimental conditions and the maj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c343a957554f4d0b82fab15292da503
https://doi.org/10.1016/0167-9317(91)90070-t
https://doi.org/10.1016/0167-9317(91)90070-t
Autor:
Timothy W. Weidman, Jean-Pierre Panabiere, Olivier Toublan, André Weill, Olivier Joubert, Cedric Monget
Publikováno v:
SPIE Proceedings.
Some of the major limitations of top surface imaging schemes are now well documented: critical dimension (CD) control across the wafer can be a serious issue as well as line edge roughness (LER). A primary focus of our work has been to investigate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a78e0b90e4b66452f2c075b0c13b41
https://doi.org/10.1117/12.350265
https://doi.org/10.1117/12.350265
Publikováno v:
SPIE Proceedings.
This paper deals with a technique recently developed at France Telecom/CNET for increasing the electrical conductance of novolak and polyvinylphenol based photoresist patterns and consequently for avoiding any charge effect occurring during SEM inspe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e128939934049db57aea51cf76ba8492
https://doi.org/10.1117/12.209219
https://doi.org/10.1117/12.209219
Autor:
Jacques H. Pelletier, Thierry Mourier, Jean-Pierre Panabiere, Olivier Joubert, Serge V. Tedesco, Michel J. Pons, Francoise Vinet, André Weill, Jean-Marc Francou, C. Martinet
Publikováno v:
SPIE Proceedings.
A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been made using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a40ec641edbff15a0bd593d547f95a05
https://doi.org/10.1117/12.142920
https://doi.org/10.1117/12.142920
Autor:
Gilles R. Amblard, Jean-Pierre Panabiere, André Weill, Philippe Romand, Frederic P. Lalanne, Michel E. Guillaume, Laurent A. Guerin
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
The intrinsic registration capability of current e-beam lithographic tools has to approach or even go below the 0.10 micrometers value ( + 3(sigma) ). However, the actual level to level overlay measurements are generally found above this limit as res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e0f9c3049f8e83e9e1f77148620b15
https://doi.org/10.1117/12.136038
https://doi.org/10.1117/12.136038
Publikováno v:
SPIE Proceedings.
In order to enhance the contrast of the e-beam negative resist, Suga has combined DUV and e- beam exposures. This application has been further extended to the high sensitive three component SAL 601 resist. As the absorption phenomenon of UV light by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178eab3583da8fa7fd40194fbcdde7d7
https://doi.org/10.1117/12.47363
https://doi.org/10.1117/12.47363
Autor:
P. Moschini, F. Lalanne, Gilles R. Amblard, Jean-Pierre Panabiere, Alain Inard, Jean-Marc Francou, L. Guérin, André Weill
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (8), pp.859-865. ⟨10.1051/rphysap:01990002508085900⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (8), pp.859-865. ⟨10.1051/rphysap:01990002508085900⟩
A new method for fabricating photomasks is proposed. The mask is prepared by burying the absorbent patterns inside the transparent photoplate instead of depositing them on the surface of the photoplate. After imaging and etching trenches into the gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12481709339b2dae8f659185770c30f6
https://hal.archives-ouvertes.fr/jpa-00246247
https://hal.archives-ouvertes.fr/jpa-00246247
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3550
Insulating materials such as photoresists retain charges during electron or ion exposure. The ultimate performances of techniques such as scanning electron microscopy (SEM), trilayer e‐beam lithography, or plasma etching can be strongly affected by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769b69c243af62b66dad564a8a7c7847
https://doi.org/10.1116/1.587469
https://doi.org/10.1116/1.587469
Publikováno v:
SPIE Proceedings.
Microwave energized bulbs are deep UV sources, which are well suited to applications requiring high light intensities of within the 200-260 nm wavelength range. This deep UV source has to date only been used either for transferring the photoresist pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61151088c9386681d2b6c4eabe9303f0
https://doi.org/10.1117/12.968419
https://doi.org/10.1117/12.968419