Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jean-Pierre Baudu"'
Autor:
Jean-Reynald Macé, Sylvain Girard, Vincent Goiffon, Hugo Dewitte, Cyprien Muller, Timothe Allanche, Hortense Desjonqueres, Serena Rizzolo, Romain Molina, Jean-Pierre Baudu, Franck Corbière, A. Le Roch, Pierre Magnan, A. Saravia Flores, P. Paillet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1284-1292. ⟨10.1109/TNS.2020.3001618⟩
International audience; Capabilities of rad-hard electronics are often degraded by post-irradiation annealing, whose effects need to be considered in designing complex systems, such as CMOS image sensors (CISs). In particular, the commonly accepted b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7680abf884d5df1eb8642f1cf6576e9
https://hal.science/hal-03192270
https://hal.science/hal-03192270
Autor:
Stephane Plumeri, Melanie Osmond, Pierre Magnan, Serena Rizzolo, Romain Molina, Franck Corbière, Timothe Allanche, Jean-Pierre Baudu, Sylvain Girard, Philippe Paillet, Vincent Goiffon, Cyprien Muller, Aziouz Chabane, Jean-Reynald Macé, Pierre Burnichon, Hortense Desjonqueres, Céline Monsanglant-Louvet, Aziz Boukenter
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
IEEE Transactions on Nuclear Science, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
Nuclear and Space Radiation Effects Conference (NSREC 2018)
Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3
Radiation Effects on Optoelectronic Detectors (CNES Workshop)
Radiation Effects on Optoelectronic Detectors (CNES Workshop), Nov 2018, Toulouse, France. pp.1-31
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
IEEE Transactions on Nuclear Science, 2019, 66 (1), pp.111-119. ⟨10.1109/TNS.2018.2884037⟩
Nuclear and Space Radiation Effects Conference (NSREC 2018)
Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3
Radiation Effects on Optoelectronic Detectors (CNES Workshop)
Radiation Effects on Optoelectronic Detectors (CNES Workshop), Nov 2018, Toulouse, France. pp.1-31
International audience; The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe2eeb6cf4514f313f8e9eb03a5b3d6b
https://hal-ujm.archives-ouvertes.fr/ujm-01964631/file/Rizzolo_22819.pdf
https://hal-ujm.archives-ouvertes.fr/ujm-01964631/file/Rizzolo_22819.pdf
Autor:
C. Monsanglant Louvet, Timothe Allanche, Jean-Reynald Macé, Jean-Pierre Baudu, Cyprien Muller, Aziz Boukenter, P. Paillet, Sylvain Girard, Vincent Goiffon, Hortense Desjonqueres, Thierry Lépine, Youcef Ouerdane, J. Rousson, Serena Rizzolo, Olivier Duhamel
Publikováno v:
Applied optics
Applied optics, Optical Society of America, 2019, 58 (22), pp.6165. ⟨10.1364/AO.58.006165⟩
Applied optics, 2019, 58 (22), pp.6165. ⟨10.1364/AO.58.006165⟩
Applied optics, Optical Society of America, 2019, 58 (22), pp.6165. ⟨10.1364/AO.58.006165⟩
Applied optics, 2019, 58 (22), pp.6165. ⟨10.1364/AO.58.006165⟩
International audience; We studied the impact of ionizing radiation at high dose levels (megagray, MGy) on the photometric budget of a radiation-resistant complementary metal oxide semi-conductor (CMOS)-based camera. This is achieved by measuring the