Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Jean-Philippe PIEL"'
Autor:
Jean-Philippe Piel, Gilles Fresquet
Publikováno v:
International Symposium on Microelectronics. 2014:000630-000634
Advanced packaging technologies are rapidly evolving and 3D architectures requires new inspection and metrology techniques. Existing techniques need to be improved but new techniques must be developed to address new challenges induced by the last fab
Autor:
Vassilis M. Papadakis, Benoit Loppinet, T. Peter Rakitzis, Katerina Stamataki, Jean-Louis P. Stehle, George E. Katsoprinakis, Xavier Schimowski, Jean-Philippe Piel, Peter C. Samartzis
Publikováno v:
Thin Solid Films
Spectroscopic ellipsometry is an established technique, particularly useful for thickness measurements of thin films. It measures polarization rotation after a single reflection of a beam of light on the measured substrate at a given incidence angle.
Autor:
Jean Philippe Piel, Jean Louis Stehle
Publikováno v:
Applied Surface Science. 256:S72-S76
Spectroscopic ellipsometry has long been recognized as a powerful technique to characterize thins films and multilayer structures. It is now routinely used for non-destructive on-line characterization of semiconductor process. SOPRALAB leader in comm
Autor:
Mickaël Gilliot, Jean-Philippe Piel
Publikováno v:
Thin Solid Films. 516:7996-8001
We propose a study on the use of Voigt or Lorentz oscillators on three examples of microelectronics materials: fluorinated silicate glass, silicon nitride and polybenzoxazole. The Voigt oscillator is a convolution of Gauss distribution and Lorentz os
Publikováno v:
Materials Science Forum. :2183-2186
Spectroscopic ellipsometry is the technique of choice to characterize thickness and refractive indices of transparent and semi-transparent thin layers with thickness ranging from few Angstroms to few micrometers. However, in case of porous thin film,
Publikováno v:
Thin Solid Films. :809-818
Spectroscopic ellipsometry is a very useful non-destructive technique to characterise the thickness and composition of multilayers with a spatial resolution of 20×40 μm. The present way to map a sample is to scan the surface of the wafer with this
Autor:
Osamu Sato, Gilles Fresquet, Yoshitaka Tatsumoto, Allen Gu, Michael Feser, Bruce Johnson, Hideo Takizawa, Raleigh Estrada, Jean-Philippe Piel, Sylvain Perrot
Publikováno v:
Three-Dimensional Integration of Semiconductors ISBN: 9783319186740
Spectroscopic reflectometry is a nondestructive technique widely used to analyze the properties of materials as thin layer thicknesses are used in advanced packaging manufacturing. The technique is based on the propagation of waves into media. If a d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01020eb21bfac4b23f6a6f50464e0159
https://doi.org/10.1007/978-3-319-18675-7_6
https://doi.org/10.1007/978-3-319-18675-7_6
Publikováno v:
Journal of Non-Crystalline Solids. 303:167-174
Precise characterization of high k gate dielectrics becomes a challenging task due to the very thin thickness (
Publikováno v:
Thin Solid Films. :631-641
We describe a high performance infrared spectroscopic ellipsometer IRSE working with a germanium Brewster angle reflection polarizer and a grid analyzer. This particular set-up significantly simplifies the calibration procedures since the only parame
Autor:
Jean-Philippe Piel, J. Bruchez, J. Russell, J.-L Stehlé, J. Imschweiler, H. Wille, S. Harrington, C. Pickering, C. Wiggins, V. Nayar
Publikováno v:
Thin Solid Films. :446-453
The performance of an automatic spectroscopic ellipsometer, the SOPRA Multi-Layer Monitor (MLM) has been evaluated over a 1-year period on representative CMOS/Bipolar wafer structures supplied by IC manufacturers. Precision, stability, throughput, an