Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Jean-Paul Salvestrini"'
Autor:
Ali Ahaitouf, Sara El-yahyaoui, Sarah Elhimer, Salima El-Ayane, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Energy Conversion and Management: X, Vol 16, Iss , Pp 100278- (2022)
This work deals with real conditions testing of two Fresnel lens-based optical concentrators for concentrator photovoltaic systems (CPV). Particular attention is paid to validate the performances of the secondary optical elements (SOEs), namely pyram
Externí odkaz:
https://doaj.org/article/5dec4d0ecdfd44cfb4ed544cbe5e43b4
Autor:
Laure Abensur Vuillaume, Justine Frija-Masson, Meriem Hadjiat, Thomas Riquier, Marie-Pia d’Ortho, Pierrick Le Borgne, Christophe Goetz, Paul L. Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Thierry Leïchlé
Publikováno v:
Journal of Personalized Medicine, Vol 12, Iss 12, p 1942 (2022)
We have previously surveyed a panel of 508 physicians from around the world about which biomarkers would be relevant if obtained in a very short time frame, corresponding to emergency situations (life-threatening or not). The biomarkers that emerged
Externí odkaz:
https://doaj.org/article/48509e6a71394885af61015e8d457e6a
Autor:
Laure Abensur Vuillaume, Thierry Leichle, Pierrick Le Borgne, Mathieu Grajoszex, Christophe Goetz, Paul L Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Marie-Pia d’Ortho
Publikováno v:
Journal of Personalized Medicine, Vol 12, Iss 1, p 106 (2022)
(1) Backround: Technological advances should foster gains in physicians’ efficiency. For example, a reduction of the medical decision time can be enabled by faster biological tests. The main objective of this study was to collect responses from an
Externí odkaz:
https://doaj.org/article/e1d82dde11c74e399955eb847318ae0e
Autor:
Yacine Halfaya, Chris Bishop, Ali Soltani, Suresh Sundaram, Vincent Aubry, Paul L. Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Sensors, Vol 16, Iss 3, p 273 (2016)
We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is funct
Externí odkaz:
https://doaj.org/article/bdcdfe00bfe04ccca6c32b31580aeb8b
Autor:
Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Yves N. Sama, Thi Huong Ngo, Tarik Moudakir, Gilles Patriarche, Simon Gautier, Paul L. Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Advanced Materials Technologies.
Autor:
Andre Perepeliuc, Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Paul L. Voss, Suresh Sundaram, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Oxide-based Materials and Devices XIV.
Autor:
Rajat Gujrati, Soufiane Karrakchou, Lucas Oliverio, Suresh Sundaram, Paul L. Voss, Eva Monroy, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Micro and Nanostructures
Micro and Nanostructures, 2023, 176, pp.207538. ⟨10.1016/j.micrna.2023.207538⟩
Micro and Nanostructures, 2023, 176, pp.207538. ⟨10.1016/j.micrna.2023.207538⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1dde6bebcd8503ff9e8f5f614c71bbe
https://hal.science/hal-03997009/document
https://hal.science/hal-03997009/document
Autor:
Phuong Vuong, Suresh Sundaram, Vishnu Ottapilakkal, Gilles Patriarche, Ludovic Largeau, Ashutosh Srivastava, Adama Mballo, Tarik Moudakir, Simon Gautier, Paul L. Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
ACS Applied Nano Materials. 5:791-800
Autor:
Adama Mballo, Ali Ahaitouf, Suresh Sundaram, Ashutosh Srivastava, Vishnu Ottapilakkal, Rajat Gujrati, Phuong Vuong, Soufiane Karrakchou, Mritunjay Kumar, Xiaohang Li, Yacine Halfaya, Simon Gautier, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
ACS Omega
ACS Omega, Vol 7, Iss 1, Pp 804-809 (2021)
ACS Omega, Vol 7, Iss 1, Pp 804-809 (2021)
Metal–semiconductor–metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride (h-BN) layer with both natural and 10B-enriched boron. Current–voltage (I–V) and c
Autor:
Mohamed Bouzidi, Wafa Malek, Noureddine Chaaben, Abdullah S. Alshammari, Ziaul Raza Khan, Mohamed Gandouzi, Monsour Mohamed, Ahmed Rebey, Abdullah A. Alatawi, Abdullah I. Alhassan, Abdullah Alharbi, Jean Paul Salvestrini, Mohammad Khaled Shakfa
Publikováno v:
Optical Engineering. 61