Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Jean-Paul Barnes"'
Autor:
Vincent Bocquet, Raphaël Cabal, Mickaël Albaric, Nevine Rochat, Raphaël Ramos, Jean-Paul Barnes, Sébastien Dubois
Publikováno v:
SiliconPV Conference Proceedings, Vol 1 (2024)
The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) is used to follow the different bo
Externí odkaz:
https://doaj.org/article/a0d32333bb0745539e82a51d68cc379b
Autor:
Mathieu de Lafontaine, Erwine Pargon, Guillaume Gay, Camille Petit-Etienne, Sylvain David, Jean-Paul Barnes, Névine Rochat, Abdelatif Jaouad, Maïté Volatier, Simon Fafard, Vincent Aimez, Maxime Darnon
Publikováno v:
Micro and Nano Engineering, Vol 11, Iss , Pp 100083- (2021)
This article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture. A SiCl4/H
Externí odkaz:
https://doaj.org/article/c4f8924965704fae8f3ccda1a2907d59
Autor:
Jean-Michel Hartmann, Nicolas Bernier, Francois Pierre, Jean-Paul Barnes, Vincent Mazzocchi, Julia Krawczyk, Gabriel Lima, Elyjah Kiyooka, Silvano De Franceschi
Publikováno v:
ECS Transactions
ECS Transactions, 2023, 111 (1), pp.53-72. ⟨10.1149/11101.0053ecst⟩
ECS Transactions, 2023, 111 (1), pp.53-72. ⟨10.1149/11101.0053ecst⟩
We are growing at CEA (i) high purity 28Si layers and (ii) c-Ge/SiGe heterostructures for electron and hole spin quantum bits. We describe here strategies usable for the fabrication of 28SOI substrates, with a focus on 28SiH4 consumption minimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80418358e91aa2fa879a132ea96f52a9
https://hal.science/hal-04104222
https://hal.science/hal-04104222
Autor:
Emese Huszár, Jean-Paul Barnes, Johann Michler, Laszlo Pethö, Agnieszka Priebe, Thomas Edward James Edwards
Publikováno v:
Analytical Chemistry. 92:12518-12527
In this work, we present a comprehensive comparison of time-of-flight secondary ion mass spectrometry (TOF-SIMS) and scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy (STEM/EDX), which are currently the most
Autor:
C. Sabbione, Jean-Paul Barnes, Emmanuel Nolot, Gabriele Navarro, Agnès Tempez, Sebastien Legendre, Yann Mazel
Publikováno v:
Surface and Interface Analysis. 52:895-899
Autor:
Infante, Ingrid C., Sergio Gonzalez Casal, Xiaofei Bai, Kevin Alhada‐lahbabi, Sara Gonzalez, Bertrand Vilquin, Pedro Rojo Romeo, David Albertini, Damien Deleruyelle, Nicolas Baboux, Solène Brottet, Bruno Canut, Jean-Paul Barnes, Matthieu Bugnet, Brice Gautier
Publikováno v:
HAL
ISAF-PFM-ECAPD 2022
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
ISAF-PFM-ECAPD 2022
ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
International audience; Polarization switching phenomena in ferroelectrics are complex processes entangled to electronic, chemical and (micro)(nano)structural properties, and intrinsic and extrinsic defects. These phenomena become critical in the fra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2fb6b346679986bb20232b32f30a2487
https://hal.science/hal-03719104
https://hal.science/hal-03719104
Autor:
Maxime Darnon, Erwine Pargon, Vincent Aimez, Mathieu de Lafontaine, Maite Volatier, Jean-Paul Barnes, Névine Rochat, Simon Fafard, Abdelatif Jaouad, Sylvain David, Camille Petit-Etienne
Publikováno v:
Micro and Nano Engineering, Vol 11, Iss, Pp 100083-(2021)
Micro and Nano Engineering
Micro and Nano Engineering, 2021, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, Elsevier, 2021, 11, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, Elsevier, 2021, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, 2021, 11, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering
Micro and Nano Engineering, 2021, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, Elsevier, 2021, 11, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, Elsevier, 2021, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
Micro and Nano Engineering, 2021, 11, pp.100083. ⟨10.1016/j.mne.2021.100083⟩
This article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture. A SiCl4/H
Autor:
T. T. Nguyen, Jean-Paul Barnes, A.M. Papon, Filadelfo Cristiano, Nicolas Bernier, Vincent Delaye, J. Aubin, J.M. Hartmann, Sebastien Kerdiles, P. Acosta-Alba, L. Dagault, Patrice Gergaud, Adeline Grenier
Publikováno v:
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
ECS Journal of Solid State Science and Technology, IOP Science, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
ECS Journal of Solid State Science and Technology, IOP Science, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
International audience; Ultraviolet Nanosecond Laser Annealing (UV-NLA) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers. The various regimes encountered, depending on the melt depth after single pulse UV-NLA, are described and discussed in t
Autor:
Richard Daubriac, Rémi Demoulin, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Jean-Paul Barnes, Pawel Michałowski, Fransesca Chiodi, Etienne Talbot, Emmanuel Scheid, Antonino La Magna, Fuccio Cristiano
Publikováno v:
ECS Meeting Abstracts. :1279-1279
The CMOS scaling beyond 10 nm technology node requires high active dopant concentrations in source/drain modules to minimize contact resistance. Pulsed laser annealing has been targeted by chip manufacturers as a future option to enhance the activati
Autor:
Jean-Paul Barnes, Névine Rochat, Badhise Ben Bakir, Christophe Licitra, Bruno Masenelli, Younes Boussadi, Philippe Ferrandis
Publikováno v:
Journal of Luminescence
Journal of Luminescence, Elsevier, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩
Journal of Luminescence, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩
Journal of Luminescence, Elsevier, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩
Journal of Luminescence, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩
International audience; Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c37c954f73b21658398ccf171df219d6
https://hal.archives-ouvertes.fr/hal-03462277
https://hal.archives-ouvertes.fr/hal-03462277