Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jean-Michel Moragues"'
Autor:
Vincenzo Della Marca, Julien Guilleau-Tavernier, Pierre Laine, Franck Melul, Marc Bocquet, Thibault Kempf, Loic Welter, Jean-Michel Moragues, Arnaud Regnier, Jean-Michel Portal
Publikováno v:
IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022)
IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022), Mar 2022, Cleveland, OH, United States. pp.1-4, ⟨10.1109/ICMTS50340.2022.9898189⟩
IEEE 34th International Conference on Microelectronic Test Structures (ICMTS 2022), Mar 2022, Cleveland, OH, United States. pp.1-4, ⟨10.1109/ICMTS50340.2022.9898189⟩
International audience; In this paper we present a full free addressable 4kb EEPROM memory array. This test structure based on CAST vehicle has been upgraded with flexible addressing logic to select any numbers of cells on single or multiple word lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b65d098c07707378de9ed09aa24a956b
https://hal.science/hal-04063478/file/paper_ICMTS_2022_5.3_della_marca.pdf
https://hal.science/hal-04063478/file/paper_ICMTS_2022_5.3_della_marca.pdf
Autor:
Philippe Lentrein, Matthias Vidal-Dho, Q. Hubert, Pascal Fornara, Jean-Michel Moragues, Patrice Ray, Bernard Pelissier, Patrice Gonon
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107909⟩
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107909⟩
This paper presents a novel methodology to observe the leakage current origin in SiOC:H low-$\kappa$ intermetallic dielectric as well as a method to localise electrically the breakdown point in usual comb/serpentine/comb structures. Our results indic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb1d8bff7790288ec93dd1af810fd697
https://hal.univ-grenoble-alpes.fr/hal-02916807
https://hal.univ-grenoble-alpes.fr/hal-02916807
Moisture Influence on Reliability and Electrical Characteristics of SiOC:H Low-k Dielectric Material
Autor:
Jean-Luc Ogier, Pascale Potard, Matthias Vidal-Dho, Bernard Pelissier, Q. Hubert, Jean-Philippe Escales, Pascal Fornara, Patrice Gonon, Jean-Michel Moragues
Publikováno v:
2019 IEEE International Integrated Reliability Workshop (IIRW).
This paper presents an in depth study of the moisture influence on reliability and electrical characteristics of SiOC:H low-κ dielectric material. Firstly, TDDB models have been evaluated on material without moisture and Impact Damage model is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25a6374356b7082ed0b5596d9d5601a7
https://doi.org/10.1109/iirw47491.2019.8989905
https://doi.org/10.1109/iirw47491.2019.8989905
Autor:
Patrice Gonon, Pascale Potard, Jean-Michel Mirabel, Jonathan Jacquot, Delphine Maury, Jean-Philippe Escales, Maxime Marchetti, Q. Hubert, Pascal Fornara, Olivier Pizzuto, Matthias Vidal-Dho, Philippe Delorme, Pascal Sallagoity, Jean-Michel Moragues, Ludovic Beauvisage
Publikováno v:
Conf. on Microelectronic Test Structures (ICMTS)
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179
This paper underlines the damages induced by probing on narrow pads reliability of specifically designed test structures placed on dicing streets and indicates that probing during electrical test steps provokes detrimental cracks diving from the pass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3ee63e3a5c25ae9fef6997ba49f793
https://hal.univ-grenoble-alpes.fr/hal-02362746
https://hal.univ-grenoble-alpes.fr/hal-02362746
Autor:
Thibault Kempf, Jean-Michel Portal, Franck Julien, Arnaud Regnier, Francois Maugain, Stephan Niel, M. Mantelli, Pascal Masson, Jean-Michel Moragues, Marjorie Hesse, Vincenzo Della Marca
Publikováno v:
2017 IEEE International Integrated Reliability Workshop (IIRW)
2017 IEEE International Integrated Reliability Workshop (IIRW), Oct 2017, Fallen Leaf Lake, CA, United States
2017 IEEE International Integrated Reliability Workshop (IIRW), Oct 2017, Fallen Leaf Lake, CA, United States
The impact of CMOS post nitridation annealing (PNA) temperature on a 40nm embedded Flash reliability is studied. Electrical characterizations of the Flash tunnel oxide are carried out on single cell. These are used to explain the better results in te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49daefc66af2c0c78f5fc1bb42689b46
https://doi.org/10.1109/iirw.2017.8361234
https://doi.org/10.1109/iirw.2017.8361234