Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Jean-Michel Mirabel"'
Autor:
Patrice Gonon, Pascale Potard, Jean-Michel Mirabel, Jonathan Jacquot, Delphine Maury, Jean-Philippe Escales, Maxime Marchetti, Q. Hubert, Pascal Fornara, Olivier Pizzuto, Matthias Vidal-Dho, Philippe Delorme, Pascal Sallagoity, Jean-Michel Moragues, Ludovic Beauvisage
Publikováno v:
Conf. on Microelectronic Test Structures (ICMTS)
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179
This paper underlines the damages induced by probing on narrow pads reliability of specifically designed test structures placed on dicing streets and indicates that probing during electrical test steps provokes detrimental cracks diving from the pass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3ee63e3a5c25ae9fef6997ba49f793
https://hal.univ-grenoble-alpes.fr/hal-02362746
https://hal.univ-grenoble-alpes.fr/hal-02362746
Publikováno v:
Solid-State Electronics. 52:1525-1529
A new 0.56 μm2 dual-gate EEPROM transistor is presented in this paper. To optimize the cell layout, a new model based on previous work has been developed. This concept allows single bit memory operations with high density; new cell programming condi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1d97c83125fc185effebbf493d2470f
https://doi.org/10.1016/j.sse.2008.06.027
https://doi.org/10.1016/j.sse.2008.06.027
Publikováno v:
Microelectronic Engineering. 84:2006-2009
High-field Fowler-Nordheim electron injection to the drain of EEPROM's is studied using a specific time-resolved measurement technique. A transient injection regime is observed only in the case of moderately doped drain, but a non-equilibrium station
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb938d7908043f7386f60571e029419c
https://doi.org/10.1016/j.mee.2007.04.089
https://doi.org/10.1016/j.mee.2007.04.089
Publikováno v:
Journal of Non-Crystalline Solids. 351:1873-1877
In a previous work, using a physical compact model to predict cell operation, we have shown a paradoxical impact on the evolution of the electrical field through the thin tunnel oxide with regard to the coupling ratio. It seems paradoxical to obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94dc9f8c53e765b19a10b053c91a94e6
https://doi.org/10.1016/j.jnoncrysol.2005.04.030
https://doi.org/10.1016/j.jnoncrysol.2005.04.030
Publikováno v:
Journal of Non-Crystalline Solids. 351:1878-1884
This paper investigates a new way of predicting an electrically erasable programmable read only memory (EEPROM) cell’s endurance without stressing the cell itself. Tunnel equivalent capacitors, formed by silicon dioxide thermally grown on N+ type S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7d5335d7f82652b725a589250896eb
https://doi.org/10.1016/j.jnoncrysol.2005.04.031
https://doi.org/10.1016/j.jnoncrysol.2005.04.031
Publikováno v:
Journal of Non-Crystalline Solids. 351:1906-1910
A novel concept of dual control gate EEPROM (Electrically Erasable and Programmable Read-Only Memory) cell and array architecture are proposed. New programming conditions used for write and erase operations are developed to improve the lifetime of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a68e06af04d0c148761b7de7290a3e
https://doi.org/10.1016/j.jnoncrysol.2005.04.036
https://doi.org/10.1016/j.jnoncrysol.2005.04.036
Publikováno v:
Journal of Non-Crystalline Solids. 351:1866-1872
This paper is devoted to the understanding of Electrically Erasable Programmable Read Only Memory (EEPROM) programming window (PW) changes with operating temperature. First a theoretical analysis is carried out, and two main contributions to the PW c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679e44412c94892cd11b054671dc875f
https://doi.org/10.1016/j.jnoncrysol.2005.04.029
https://doi.org/10.1016/j.jnoncrysol.2005.04.029
Publikováno v:
Journal of Non-Crystalline Solids. 322:246-249
Generally the design of the memory cell, as an electrically erasable programmable read-only memory, is based on the calculation of coupling ratio. This step is fundamental because it determines cell performances. Practically designers use the maximum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2091dbfa23c0823e423c64611e018d70
https://doi.org/10.1016/s0022-3093(03)00209-6
https://doi.org/10.1016/s0022-3093(03)00209-6
Publikováno v:
Journal of Non-Crystalline Solids. 280:103-109
The write and erase programmable operations in electrically erasable read only memories (EEPROM) which are based on Fowler–Nordheim tunneling injection through a thin tunnel oxide window have been reproduced on specific large area double polycrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e9d3aa172f6813c78611164ee6eb05
https://doi.org/10.1016/s0022-3093(00)00360-4
https://doi.org/10.1016/s0022-3093(00)00360-4
Publikováno v:
Journal of Non-Crystalline Solids. 280:122-126
A model for static and transient simulations of an electrically erasable programmable read-only memory (EEPROM) cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81eaf831c2aa4e39b8f56f95ecd86cfb
https://doi.org/10.1016/s0022-3093(00)00363-x
https://doi.org/10.1016/s0022-3093(00)00363-x