Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Jean-Marie Pham"'
Autor:
Jean-Charles Henrion, Anthony Ghiotto, Tifenn Martin, null Jean-Marie-Pham, Petronilo Martin-Iglesias, Christophe Goujon, Laurent Carre
Publikováno v:
IEEE Microwave and Wireless Components Letters. 32:676-679
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1269fd0fb3328a688553538de9690327
https://doi.org/10.1109/lmwc.2022.3168544
https://doi.org/10.1109/lmwc.2022.3168544
Publikováno v:
2022 20th IEEE Interregional NEWCAS Conference (NEWCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80e79fc371247e4b016c472c1ec8bc4
https://doi.org/10.1109/newcas52662.2022.9842261
https://doi.org/10.1109/newcas52662.2022.9842261
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd876586816e458225b45cc0fdd1d7a0
https://doi.org/10.1109/ims37962.2022.9865446
https://doi.org/10.1109/ims37962.2022.9865446
Akademický článek
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Publikováno v:
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cdc4fc6bd1e6c2154036e7c60ecd188
https://doi.org/10.1109/imws-amp53428.2021.9643855
https://doi.org/10.1109/imws-amp53428.2021.9643855
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
In this paper, a patent pending reduced-height waveguide Y-junction circulator structure based on two asymmetrical gyromagnetic posts is presented. This new reduced-height topology is of high interest for implementation in waveguide microwave systems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e2962622d3163701b0a029be5b5902
https://doi.org/10.1109/ims19712.2021.9574830
https://doi.org/10.1109/ims19712.2021.9574830
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
Very recently, the high-power handling capability of the high-performance air-filled substrate integrated waveguide (AFSIW) technology has been experimentally demonstrated and reported in literature. This important milestone confirms the interest of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cbc599dc9f0951bbcd15bab290f520e
https://doi.org/10.1109/ims30576.2020.9223946
https://doi.org/10.1109/ims30576.2020.9223946
Publikováno v:
IEEE Microwave and Wireless Components Letters. 28:1038-1040
This letter presents a highly linear, efficient, and fully integrated 2.5-GHz power amplifier (PA) for 4G long term evolution (LTE) applications in the 65-nm CMOS process. To improve the linearity, the segmented bias technique is adopted to increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb1f0584716c4faa900beb98e31e01b
https://doi.org/10.1109/lmwc.2018.2869600
https://doi.org/10.1109/lmwc.2018.2869600
Publikováno v:
2019 49th European Microwave Conference (EuMC).
In this paper, an air-filled substrate integrated waveguide (AFSIW) termination is introduced. To the authors' knowledge, it is the first time such essential component found in most microwave and millimetre-wave systems is reported based on the AFSIW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7267af0fa035f32ef5dabeaa92b5c72e
https://doi.org/10.23919/eumc.2019.8910911
https://doi.org/10.23919/eumc.2019.8910911
Publikováno v:
ICECS
ICECS, Dec 2018, Bordeaux, France
ICECS, Dec 2018, Bordeaux, France
This paper presents the design of fully integrated transformer-based impedance matching for LTE power amplifier (PA) applications. The LTE standard requires high level of output peak-to-average power ratio; hence, it degrades the efficiency in back-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb7bbc7e786f9850920824030ab5768a
https://hal.archives-ouvertes.fr/hal-02009422
https://hal.archives-ouvertes.fr/hal-02009422
