Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jean-Marie Lentali"'
Autor:
Marco Piccardo, Chi-Kang Li, Svitlana Mayboroda, Bastien Bonef, Robert M. Farrell, James S. Speck, Jacques Peretti, Jean-Marie Lentali, Yuh-Renn Wu, Lucio Martinelli, Marcel Filoche, Claude Weisbuch
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We present a model of carrier distribution and transport accounting for quantum localization effects in disordered semiconductor alloys. It is based on a recent mathematical theory of quantum localization which introduces a spatial function called lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3304503d9f69e929689592ec621835d0
https://doi.org/10.1117/12.2291009
https://doi.org/10.1117/12.2291009
Autor:
Fouad Maroun, Nathan G. Young, Petr Polovodov, Wiebke Hahn, Jacques Peretti, Jean-Marie Lentali, Y. Lassailly, James S. Speck, Claude Weisbuch, Lucio Martinelli, Marcel Filoche
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXVI.
In nitride ternary alloys, natural compositional disorder induces strong electronic localization effects. We present a new experimental approach which allows a direct probing at nanometer scale of disorder-induced localization effects in InGaN/GaN qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd515f117ac0fb69ffba1fce19a10d1
https://doi.org/10.1117/12.2290887
https://doi.org/10.1117/12.2290887
Publikováno v:
2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
GaN-based alloys are characterized by important spatial composition inhomogeneities resulting from the random distribution of Indium atoms. These variations can induce carrier localization and strongly influence the performance of the devices. We pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50e0e47c38d882a16e5bf29c284bca6
https://doi.org/10.1109/nusod.2017.8010008
https://doi.org/10.1109/nusod.2017.8010008