Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jean-Marie Dorkel"'
Publikováno v:
IET Circuits, Devices & Systems. 8:188-196
Power device reliability is a multidisciplinary domain. It requires design and integration of sensors, implementation of signal processing algorithms that allow processing the different data provided by the different sensors in order to predict by st
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 14:441-445
The purpose of this paper is based on the estimation of power MOSFET junction temperature during a short-duration avalanche mode. Therefore, an experiment has been developed and results have been correlated with simple electrothermal modeling. The si
Autor:
Patrick Tounsi, Jean-Marie Dorkel, Jean-Luc Massol, Jean-Michel Reynes, T. Azoui, Emilie Pomes
Publikováno v:
Microelectronics Reliability. 53:1750-1754
In this paper, an experimental and numerical procedure has been developed to estimate the junction temperature of a power MOSFET when operating in avalanche mode of short duration. At first, a simplified electrothermal model proposed in literature ha
Publikováno v:
Materials Science and Engineering: B. 177:1362-1366
The quality of the gate oxide is a central parameter for power MOSFET devices dedicated to automotive applications. Reliability is systematically evaluated through electrical tests. The purpose of this study is to apply the QBD test directly at probe
Publikováno v:
Microelectronics Journal. 43:642-648
This paper presents a new and innovative methodology for power components manufacturers to generate accurate boundary condition independent dynamic Compact Thermal Models (“BCI” DCTMs). The originality of this methodology is summarized by taking
Publikováno v:
Microelectronics Reliability. 52:489-496
Reliability is a major economic and technical challenge for power electronics dedicated to embedded applications (avionics, automotive, hybrid vehicles, etc.). As the damage in a power assembly is essentially due to thermo-mechanical stress resulting
Publikováno v:
Microelectronics Reliability. 51:1943-1947
This paper presents a methodology, based on 3D electro-thermal simulation, to investigate failures of vertical power MOSFET due to metallization ageing of source terminal. Modelling steps to obtain a 3D finite element modelling of MOSFET are presente
Publikováno v:
Microelectronics Reliability. 49:1341-1345
This paper presents the impact of high current repetitive avalanche pulses on a low voltage vertical power MOSFET at high temperature. Measurements show that R DSon decreases with the number of avalanche cycles whereas other electrical parameters sta
Autor:
Patrick Tounsi, Jean-Marie Dorkel, Jean-Pierre Fradin, Marc Legros, B. Khong, X. Chauffleur, Colette Levade, A. Deram, G. Vanderschaeve, Philippe Dupuy
Publikováno v:
Microelectronics Reliability. 45:1717-1722
In this paper, an innovative methodology for predictive reliability of intelligent power devices used in automotive applications is considered. Reliability management is done at all levels of the technological process. This method is based on the fai
Publikováno v:
2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Currently a strong demand for robustness has emerged in all areas of power devices applications. Accordingly, phenomena at the origin of the failure mechanism must be studied. However, these phenomena are difficult to capture experimentally; hence, m