Zobrazeno 1 - 10
of 151
pro vyhledávání: '"Jean-Marie Bluet"'
Autor:
Anna L. Pellegrino, Estelle Wagner, Francesca Lo Presti, William Maudez, Simon Kolb, Rashmi Rani, Antoine Bernard, Stephan Guy, Alban Gassenq, Marina Raevskaia, Christian Grillet, Rahma Moalla, Claude Botella, Romain Bachelet, Bruno Masenelli, Jean‐Marie Bluet, Sebastien Cueff, Patrick Chapon, Giacomo Benvenuti, Graziella Malandrino
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 34, Pp n/a-n/a (2023)
Abstract Lithium niobate is a material of special interest for its challenging functional properties, which can suit various applications. However, high quality 200‐mm LixNb1‐xO3 thin film grown on sapphire substrate have never been reported so f
Externí odkaz:
https://doaj.org/article/a32b3cb9227e44b1bb4bb9c35699d1bf
Autor:
Antonin M. Massoud, Valeria Lacatena, Maciej Haras, Emmanuel Dubois, Stéphane Monfray, Jean-Marie Bluet, Pierre-Olivier Chapuis, Jean-François Robillard
Publikováno v:
APL Materials, Vol 10, Iss 5, Pp 051113-051113-6 (2022)
Understanding how thermal-phonon paths can be shaped is key for controlling heat dissipation at the nanoscale. Thermophononic crystals are periodic porous nanostructures with thermal conductivity deviating from effective medium theory, which is possi
Externí odkaz:
https://doaj.org/article/271f3d3d4e11408fb4331e6df7946b8c
Autor:
Stefania Castelletto, Abdul Salam Al Atem, Faraz Ahmed Inam, Hans Jürgen von Bardeleben, Sophie Hameau, Ahmed Fahad Almutairi, Gérard Guillot, Shin-ichiro Sato, Alberto Boretti, Jean Marie Bluet
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 2383-2395 (2019)
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropilla
Externí odkaz:
https://doaj.org/article/0ffadea55096459b9649c33c731996a7
Autor:
Louise Wittmann, Joseph Garnier, Naomi Sakata, Elisabeth Auzias, Martin Dumoulin, Nathanaël Barlier, Théotime Bergese, Lara Leclerc, Florence Grattard, Paul O. Verhoeven, Jérémie Pourchez, Claude Botella, Jean-Marie Bluet, Béatrice Vacher, José Penuelas
Publikováno v:
ACS Applied Polymer Materials
ACS Applied Polymer Materials, 2023, 5 (3), pp.2282-2288. ⟨10.1021/acsapm.3c00145⟩
ACS Applied Polymer Materials, 2023, 5 (3), pp.2282-2288. ⟨10.1021/acsapm.3c00145⟩
International audience; The Covid-19 crisis has led to a massive surge in the use of surgical masks worldwide, causing risks of shortages and high pollution. Various decontamination techniques are currently being studied to reduce these risks by allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c9f3326b37cd704bc95776a27f813cb
https://doi.org/10.1021/acsapm.3c00145
https://doi.org/10.1021/acsapm.3c00145
Autor:
Maroun Dagher, Camille Sonneville, Georges Brémond, Dominique Planson, Eric Frayssinet, Yvon Cordier, Helge Haas, Mohammed Reda Iretki, Julien Buckley, Vishwajeet Maurya, Matthew Charles, Jean-Marie Bluet
Publikováno v:
physica status solidi (a)
physica status solidi (a), 2023, ⟨10.1002/pssa.202200841⟩
physica status solidi (a), 2023, ⟨10.1002/pssa.202200841⟩
International audience; Schottky barrier diodes on GaN on GaN substrates are fabricated for the purposeof material and technology characterization. The epitaxial layers are grown byMOCVD. I–V measurements as a function of the temperature in the ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a4cfc43470776312b7ce81c4755cad
https://hal.science/hal-04111725/document
https://hal.science/hal-04111725/document
Autor:
Halima Mazari, Kheira Ameur, Aicha Boumesjed, Reski Khelifi, Sedik Mansouri, Nadia Benseddik, Nawal Benyahya, Zineb Benamara, Jean-Marie Bluet
Publikováno v:
Experimental and Theoretical NANOTECHNOLOGY. :49-57
The current–voltage (I–V) characteristics of Schottky diodes on free-standing GaN substrate are investigated by using electrical characterization and analytical modelling calculation. We have calculated the electrical parameters from experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f477105b3ea399004f57d208fd254e36
https://doi.org/10.56053/4.1.49
https://doi.org/10.56053/4.1.49
Autor:
Hans Jürgen von Bardeleben, Abdul Salam Al Atem, Faraz A. Inam, Stefania Castelletto, Sophie Hameau, Jean-Marie Bluet, Shin-ichiro Sato, Alberto Boretti, Ahmed Fahad Almutairi, Gérard Guillot
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2019, 10, pp.2383-2395. ⟨10.3762/bjnano.10.229⟩
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 2383-2395 (2019)
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2019, 10, pp.2383-2395. ⟨10.3762/bjnano.10.229⟩
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 2383-2395 (2019)
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropilla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a6e3e3586b56d2fbcdc9b9f9db8b5a7
https://repo.qst.go.jp/records/78070
https://repo.qst.go.jp/records/78070
Publikováno v:
AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019.
We report the characterization of arrays of micropillars fabricated in an n-type 4H-SiC using photolithography to enhance the emission of bandgap color centers in silicon carbide emitting in the spectral region from 850 nm to 1400 nm. The emission is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd63c88928a7f06c1f73058b781e76a3
https://doi.org/10.1117/12.2556256
https://doi.org/10.1117/12.2556256
Publikováno v:
physica status solidi (a). 219:2100410
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75bf756d8087bb68b8c760dbff3a1869
https://doi.org/10.1002/pssa.202100410
https://doi.org/10.1002/pssa.202100410
Autor:
O. de Vries, Mitchell, Shinichiro, Sato, Takeshi, Ohshima, C. Gibson, Brant, Jean-Marie, Bluet, Castelletto, Stefania, C. Johnson, Brett, Reineck, Philipp
Publikováno v:
Advanced Optical Materials. 9(20):2100311
Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::8ea528dbb03a5f359223f789b85970ca
https://repo.qst.go.jp/records/84186
https://repo.qst.go.jp/records/84186