Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jean-Marc Armani"'
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
International audience; A recent large-scale study revealed that the uncorrectable bit error rates in data center solid-sate drives (SSDs) may fall far below the JEDEC standard recommendations. Here, a new refresh policy is proposed to improve the to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51d0592b74f01c7206d4004a057bb7c5
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008002
Publikováno v:
DTIS: Design & Technology of Integrated Systems In Nanoscale Era
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
DTIS: Design & Technology of Integrated Systems In Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. pp.8368578, ⟨10.1109/DTIS.2018.8368578⟩
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era
DTIS 2018-13th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, LIRMM, Apr 2018, Taormina, Italy. ⟨10.1109/DTIS.2018.8368578⟩
DTIS
International audience; In this paper, we evaluate the temperature influence on the vulnerability to single event upsets (SEU) of 6-transistor static random access memory (6T-SRAM) cells and dual interlocked storage cells (DICE). The critical charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed4ac9fdf136eaf30f46f1bc18f1e6a6
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02008214
Publikováno v:
ITC
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
48th International Test Conference
ITC: International Test Conference
ITC: International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
ITC 2017-48th International Test Conference
ITC 2017-48th International Test Conference, Oct 2017, Fort Worth, United States. ⟨10.1109/TEST.2017.8242066⟩
International audience; Solid-state drives (SSDs) based on NAND flash memories provide an attractive storage solution as they are faster and less power hungry than traditional hard-disc drives (HDDs). Aggressive storage density improvements in flash
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e48158c0d0a80b92ce81e663d2556fd
https://doi.org/10.1109/test.2017.8242066
https://doi.org/10.1109/test.2017.8242066
Autor:
Valentin Gherman, Francis Joffre, Costin Anghel, Marcelino Seif, Franck Badets, Emna Farjallah, Emna Chabchoub, Christophe Layer, Jean-Marc Armani, Luigi Dilillo
Publikováno v:
22nd IEEE European Test Symposium
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
ETS: European Test Symposium
ETS: European Test Symposium, May 2017, Limassol, Cyprus. pp.1-6, ⟨10.1109/ETS.2017.7968233⟩
ETS 2017-22nd IEEE European Test Symposium
ETS 2017-22nd IEEE European Test Symposium, May 2017, Limassol, Cyprus. pp.7968233, ⟨10.1109/ETS.2017.7968233⟩
ETS
International audience; Increasing the number of bits per cell and technology scaling are ways to reduce the cost per gigabyte of flash memories and solid-state drives (SSDs). Unfortunately, this trend has a negative impact on data retention capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4cb994baf0edb369b31dc7dae7c8dc0
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
https://hal-lirmm.ccsd.cnrs.fr/lirmm-01687675
Autor:
Urena Acuna, Alejandro
Publikováno v:
Other. Université Paris-Saclay, 2021. English. ⟨NNT : 2021UPAST082⟩
Ionizing radiation causes malfunction in electronic systems, from miscalculations to a total device failure. At nanometric scale, high-energy radiation produces charges liable to be trapped in the insulating oxides of the device. These trapped charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a51699fe345a643ae76c5e0ecc6b704d
https://tel.archives-ouvertes.fr/tel-03339535/file/98798_URENA_ACUNA_2021_archivage.pdf
https://tel.archives-ouvertes.fr/tel-03339535/file/98798_URENA_ACUNA_2021_archivage.pdf