Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jean-Luc Rouviére"'
Publikováno v:
IUCrJ, Vol 5, Iss 1, Pp 67-72 (2018)
Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic struc
Externí odkaz:
https://doaj.org/article/93eab849119f4f0a9274f8c0d82188a8
Autor:
Bruno C. da Silva, Zahra S. Momtaz, Lucas Bruas, Jean-Luc Rouviére, Hanako Okuno, David Cooper, Martien I. den-Hertog
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Applied Physics Letters, 2022, 121 (12), pp.123503. ⟨10.1063/5.0104861⟩
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p–n junction. The effect of different STEM modes and the trade-off between spatial resolution and ele
Autor:
Tuan M. Duong, Kshipra Sharma, Fabio Agnese, Jean-Luc Rouviere, Hanako Okuno, Stéphanie Pouget, Peter Reiss, Wai Li Ling
Publikováno v:
Frontiers in Chemistry, Vol 10 (2022)
In-depth and reliable characterization of advanced nanoparticles is crucial for revealing the origin of their unique features and for designing novel functional materials with tailored properties. Due to their small size, characterization beyond nano
Externí odkaz:
https://doaj.org/article/47b5d2c23605494888e5537283a7ba71