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pro vyhledávání: '"Jean-Luc Perrossier"'
Publikováno v:
physica status solidi c. 8:915-918
We report on the synthesis of SiGe layers on silicon by using a pulsed laser processing technique (Gas Immersion Laser Doping) where GeCl4 gas molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser indu
Autor:
Frédéric Fossard, Jacques Boulmer, Franck Fortuna, Daniel Bouchier, Cyril Bachelet, Jean-Luc Perrossier, Véronique Mathet, Dominique Débarre
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2008, 93, pp.021911. ⟨10.1063/1.2956674⟩
Applied Physics Letters, American Institute of Physics, 2008, 93, pp.021911. ⟨10.1063/1.2956674⟩
We report on the synthesis of SiGe layers on silicon by gas immersion laser doping. GeCl(4) molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. Structural and chemical