Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Jean-Luc Bischoff"'
Autor:
Jean‐Luc Bischoff, Martin Eberli
Publikováno v:
Geomechanics and Tunnelling. 15:767-773
Autor:
Chiraz Ben Azzouz, Mohamed Zanouni, C. Chefi, Hussein Mortada, Jean-Luc Bischoff, D. Dentel, Mickael Derivaz, Alban Florentin, A. Akremi
Publikováno v:
Thin Solid Films. 562:668-673
We report here on the atomic migration and associated nucleation mechanisms of Si nanocrystals on LaAlO 3 (001) surface, a high-κ crystalline oxide. Chemical and structural properties were investigated using X-ray photoelectron spectroscopy, X-ray p
Growth of Fe nanocrystals on LaAlO 3 (001) and epitaxial relationship determination by RHEED and XPS
Autor:
Mohamed Zanouni, M. Diani, Chiraz Ben Azzouz, D. Dentel, Mickael Derivaz, Jean-Luc Bischoff, Emmanuel Denys
Publikováno v:
physica status solidi c. 11:1393-1396
Non-volatiles flash memories embedding nanocrystals are promising devices. These memories are made of semiconducting or metallic nanostructures inserted in an insulating matrix. SiO2, traditionally used as an insulator, is gradually replaced by high-
Autor:
Rafael García, Jean-Luc Bischoff, Chiraz Ben Azzouz, Abdessamad Aouni, Mohamed Zanouni, M. Diani, D. Dentel, Emmanuel Denys, Francisco M. Morales, José Manuel, Mickael Derivaz
Publikováno v:
Journal of Crystal Growth. 391:121-129
Fe deposits were performed on LaAlO3 (001) by molecular beam epitaxy at different substrate temperatures. Chemical and structural characterizations were carried out in-situ, by X-ray photoelectron spectroscopy (XPS), reflection high-energy electron d
Autor:
Jean-Luc Bischoff, Christelle Delaite, Sophie Bistac, D. Dentel, C. Ben-Azzouz, Julien Kiehl, Mickael Derivaz
Publikováno v:
Applied Surface Science. 264:864-871
In order to facilitate its incorporation into a polymer matrix (mostly hydrophobic), calcium carbonate (CaCO3), which is strongly hydrophilic, has to be chemically treated to avoid the formation of aggregates and to improve the compatibility with the
Autor:
José Manuel, Miriam Herrera, Rafael García, D. Dentel, Jean-Luc Bischoff, Emmanuel Denys, Hussein Mortada, Francisco M. Morales, Mickael Derivaz
Publikováno v:
Acta Materialia. 60:1929-1936
We report on the initial growth mechanisms of Ge on LaAlO3(0 0 1), a crystalline oxide with a high dielectric constant (high-κ material). Chemical and structural properties were investigated in situ, through X-ray photoelectron spectroscopy and refl
Autor:
Chiraz Ben Azzouz, Rafael García, Jean-Luc Bischoff, C. Chefi, A. Akremi, Mickael Derivaz, Hussein Mortada, Francisco M. Morales, José Manuel, D. Dentel, M. Diani, Miriam Herrera
Publikováno v:
physica status solidi (a). 209:657-662
We present a comparative structural study of the growth of Si and Ge deposited by molecular beam epitaxy (MBE) on a c(2 × 2) reconstructed LaAlO 3(001) substrate. Our findings are based on complementary experimental techniques such as in situ X-ray
Publikováno v:
Surface Science. 603:L66-L69
We report on the growth of Si on c(2 × 2) reconstructed LaAlO 3 (0 0 1) surfaces at high substrate temperature (700 °C) by molecular beam epitaxy. An initial Volmer–Weber mode is evidenced using reflection high energy electron diffraction (RHEED)
Publikováno v:
Journal of Physics D: Applied Physics. 40:6225-6241
Using complementary surface analysis techniques, we study the Ge growth on distinct SiC(0 0 0 1) reconstructions and elucidate complex mechanisms occurring by thermal activation. Two Si-rich reconstructions, (3 × 3) and , and one C-rich, , are conce
Autor:
Jean-Luc Bischoff, M. Diani, L. Kubler, Mickael Derivaz, D. Dentel, Kamel Aït-Mansour, D. Bolmont
Publikováno v:
Journal de Physique IV (Proceedings). 132:17-21
The Ge growth behaviour on the 3x3 Si-rich surface termination of 4H-SiC(0001) has been investigated in this study. After the deposit of one Ge monolayer at room temperature by molecular beam epitaxy, the film is submitted to isochronal annealing cyc