Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Jean-Luc Autran"'
Autor:
Jean-Luc Autran, Daniela Munteanu
Publikováno v:
Journal of Nuclear Engineering, Vol 5, Iss 1, Pp 91-110 (2024)
In this paper, the interactions of low-energy muons (E < 10 MeV) with natural silicon, the basic material of microelectronics, are studied by Geant4 and SRIM simulation. The study is circumscribed to muons susceptible to slowdown/stop in the target a
Externí odkaz:
https://doaj.org/article/7a9fcf13bdc746168008efbde0530818
Autor:
Jean-Luc Autran, Daniela Munteanu
Publikováno v:
Crystals, Vol 14, Iss 2, p 128 (2024)
In this work, the radiation response of bulk GaN and Ga2O3 materials exposed to ground-level neutrons is studied by Geant4 numerical simulation, considering the whole atmospheric neutron spectrum at sea level, from thermal to high energies (GeV). The
Externí odkaz:
https://doaj.org/article/e75ea9d980a74196b8d4f3651a4f6344
Autor:
Ygor Q. Aguiar, Frédéric Wrobel, Jean-Luc Autran, Paul Leroux, Frédéric Saigné, Vincent Pouget, Antoine D. Touboul
Publikováno v:
Aerospace, Vol 7, Iss 2, p 12 (2020)
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects. However, the importance of con
Externí odkaz:
https://doaj.org/article/e03cc6de11ca46b38f5437bd3ff1379f
Autor:
Jean-Luc Autran, Daniela Munteanu
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩
IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩
International audience; The exponential dependence of the soft-error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion-collection approach. A full analytical f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cbeb2a1c2a2533a82552028a61729e2
https://doi.org/10.1109/tns.2023.3263106
https://doi.org/10.1109/tns.2023.3263106
Autor:
Jean-Luc Autran, Valerie Bertin, Calogero Timineri, Capucine Lecat-Mathieu de Boissac, Jean-Marc Daveau, Serge De-Paoli, Gilles Gasiot, Anna Asquini, Fady Abouzeid, Victor Malherbe, Philippe Roche
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1040-1044
This article presents a radiation-hardened Cortex-R4F system-on-chip prototype with integrated total ionizing dose (TID) dynamic compensation capabilities, designed and fabricated in 28-nm fully depleted silicon-on-insulator (FD-SOI) technology. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c40c8c08651ff67091e560d937096b9e
https://doi.org/10.1109/tns.2021.3071199
https://doi.org/10.1109/tns.2021.3071199
Autor:
Philippe Roche, Jean-Luc Autran, Capucine Lecat-Mathieu de Boissac, Fady Abouzeid, Victor Malherbe, Gilles Gasiot
Publikováno v:
IEEE Transactions on Nuclear Science. 68:850-856
In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876855c93feb198ef74420b4006cb63c
https://doi.org/10.1109/tns.2021.3071963
https://doi.org/10.1109/tns.2021.3071963
Publikováno v:
IEEE Transactions on Nuclear Science. 68:603-610
In this article, we present Tool suIte for rAdiation Reliability Assessment (TIARA), an industrial version of a Monte Carlo single-event simulation platform, enabling fast and accurate soft error rate (SER) estimations. This tool is capable of simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1634be76c52dc0eecaa0e08d7f3ab866
https://doi.org/10.1109/tns.2021.3071256
https://doi.org/10.1109/tns.2021.3071256
Autor:
Jean-Luc, Autran, Daniela, Munteanu
Publikováno v:
New Advances in Semiconductors
New Advances in Semiconductors, IntechOpen, 2022, ⟨10.5772/intechopen.103047⟩
New Advances in Semiconductors, IntechOpen, 2022, ⟨10.5772/intechopen.103047⟩
International audience; This work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond) and III-V (GaAs, GaN, GaP, GaSb, InAs, InP, InSb, AlAs) semiconductors subjected to D-D (2.45 MeV) and D-T (14 MeV) neutrons. The response of each
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe5e550a428bdd574b392ee0f5e17c78
https://hal-amu.archives-ouvertes.fr/hal-03695354/document
https://hal-amu.archives-ouvertes.fr/hal-03695354/document
Autor:
Victor Malherbe, Francois Roy, Olivier Nier, Thomas Dalleau, Serge De Paoli, Philippe Roche, Jean-Luc Autran, Martin Dentan, Guo-Neng Lu
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9935f2012cc61167465771d0110e3d5
https://hal.science/hal-04138209
https://hal.science/hal-04138209
Autor:
Guenole Lallement, Valerie Bertin, Dimitri Soussan, Victor Malherbe, Jean-Luc Autran, Gilles Gasiot, Capucine Lecat-Mathieu de Boissac, Philippe Roche, Fady Abouzeid
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1326-1331
This article presents a digital dosimeter for on-chip total ionizing dose (TID) computation, designed and fabricated in 28- and 22-nm fully depleted silicon-on-insulator (FD-SOI) technologies. FD-SOI has improved, by far, the robustness to single eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b4231b6782e5314055d678432db462
https://doi.org/10.1109/tns.2020.2994435
https://doi.org/10.1109/tns.2020.2994435