Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jean-Louis Duvault"'
Autor:
A. Maaref, S. Jeanneret, Nicole Jaffrezic-Renault, Jean-Louis Duvault, H. Perrot, N. F. de Rooij, G.-A. Racine, G. Hollinger, A. Gagnaire
Publikováno v:
Thin Solid Films. 214:110-115
In order to graft a silicon nitride (Si3N4) pH-ISFET (ion-sensitive field effect transistor) for the preparation of a reference field effect transistor or an ion-sensitive Si3N4 ISFET, a preliminary oxidation treatment of Si3N4 thin layers has been f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f63e3b7f133f0725c63dd7cc7e988bec
https://doi.org/10.1016/0040-6090(92)90464-m
https://doi.org/10.1016/0040-6090(92)90464-m
Autor:
Nicole Jaffrezic-Renault, Dominique Morel, Yolanda Duvault-Herrera, Jean-Louis Duvault, G. Hollinger, J. Serpinet
Publikováno v:
Colloids and Surfaces. 53:169-182
Three analytical methods were applied for the analysis of grafted planar heterostructures of Si/SiO2: neutron activation, GC and XPS analysis. Neutron activation analysis of bromoalkyl grafts allows the graft density to be quantified. Several paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa43f5aea1df6495796acad204570073
https://doi.org/10.1016/0166-6622(91)80043-n
https://doi.org/10.1016/0166-6622(91)80043-n
Autor:
A. Gagnaire, Nicole Jaffrezic-Renault, J. Serpinet, Dominique Morel, Claude Martelet, Jean-Louis Duvault, Yolanda Duvault, Francoise. Gardies
Publikováno v:
Thin Solid Films. 185:169-179
The physicochemical properties of silica surfaces covalently bonded with alkyl monolayers, in a chain length range from C6 to C22, are investigated by using chromatographic, ellipsometric and capacitance measurements. A compact structure is found wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7204f5179c775c51cf4bba63af14ef28
https://doi.org/10.1016/0040-6090(90)90016-7
https://doi.org/10.1016/0040-6090(90)90016-7