Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Jean-Hervé Tortai"'
Autor:
Joyce Estephan, Marie Panabière, Camille Petit-Etienne, Sebastien Labau, Léo Bon, Jean-Hervé Tortai, Cécile Gourgon
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100255- (2024)
Water is a vital component for all living organisms, yet persistent water scarcity remains a global challenge. One potential solution lies in replicating the atmospheric water collection mechanism observed in the Stenocara beetle, characterized by a
Externí odkaz:
https://doaj.org/article/8a9b4ef0a31f4431afbdba9196d00bf5
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3951 (2022)
Mueller matrix ellipsometry (MME) is a powerful metrology tool for nanomanufacturing. The application of MME necessitates electromagnetic computations for inverse problems of metrology determination in both the conventional optimization process and t
Externí odkaz:
https://doaj.org/article/b1d4d79b5daa47ed99287737b08d66c0
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Publikováno v:
Microscopy and Microanalysis
Microscopy and Microanalysis, Aug 2021, pittsburgh, United States. pp.1766-1768, ⟨10.1017/s1431927621006462⟩
Microscopy and Microanalysis, Aug 2021, pittsburgh, United States. pp.1766-1768, ⟨10.1017/s1431927621006462⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24dc53117d26002d5fa99c476c688499
https://cnrs.hal.science/hal-03368045/document
https://cnrs.hal.science/hal-03368045/document
Autor:
Sebastien Soulan, Audrey Berthoud, Jean-Hervé Tortai, Victor Gredy, Maxime Templier, Delphine Le Cunff, Raffaele Bianchini, Thomas Alcaire, Mehdi Kessar
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. pp.79, ⟨10.1117/12.2582058⟩
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. pp.79, ⟨10.1117/12.2582058⟩
International audience; On imager devices, color resists are used as optical filters to produce RGB pixel arrays. These layers are depositedthrough spin coating process towards the end of the fabrication process flow, where complex topography can ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c354d828719386199ae82490427b37d
https://hal-cnrs.archives-ouvertes.fr/hal-03368015
https://hal-cnrs.archives-ouvertes.fr/hal-03368015
Publikováno v:
Composites Science and Technology
Composites Science and Technology, 2021, 216, pp.109063. ⟨10.1016/j.compscitech.2021.109063⟩
Composites Science and Technology, Elsevier, 2021, 216, pp.109063. ⟨10.1016/j.compscitech.2021.109063⟩
Composites Science and Technology, 2021, 216, pp.109063. ⟨10.1016/j.compscitech.2021.109063⟩
Composites Science and Technology, Elsevier, 2021, 216, pp.109063. ⟨10.1016/j.compscitech.2021.109063⟩
High-k nanocomposite photoresists are highly sought-after dielectric materials for the manufacturing and miniaturization of integrated capacitors. Herein, in-depth high voltage dielectric characterizations of Metal Polymer Composites (MPCs) having ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e7fb2897ef4f7e5e432ef195be37057
https://cnrs.hal.science/hal-03367966
https://cnrs.hal.science/hal-03367966
Publikováno v:
Materials Chemistry and Physics
Materials Chemistry and Physics, Elsevier, 2020, 259, pp.124000. ⟨10.1016/j.matchemphys.2020.124000⟩
Materials Chemistry and Physics, 2020, 259, pp.124000. ⟨10.1016/j.matchemphys.2020.124000⟩
Materials Chemistry and Physics, Elsevier, 2020, 259, pp.124000. ⟨10.1016/j.matchemphys.2020.124000⟩
Materials Chemistry and Physics, 2020, 259, pp.124000. ⟨10.1016/j.matchemphys.2020.124000⟩
1. Abstract In this study, we first compare the bandgap determination methods in SiON thin films using two established techniques: Ellipsometry and the Energy Loss Spectrum from X-ray Photoelectron Spectroscopy. In the ellipsometry case, we modelled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bc9f9eea375173039cde3f099febf0d
https://hal-cnrs.archives-ouvertes.fr/hal-03017737/document
https://hal-cnrs.archives-ouvertes.fr/hal-03017737/document
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Aug 2020, Saratoga Springs, United States. pp.1-6, ⟨10.1109/ASMC49169.2020.9185349⟩
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Aug 2020, Saratoga Springs, United States. pp.1-6, ⟨10.1109/ASMC49169.2020.9185349⟩
International audience; Spectroscopic ellipsometry is a very sensitive metrology technique to accurately measure the thickness and the refractive index of the different layers present on specific dedicated metrology targets. In parallel, optical defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c66082936e37232f5fc12bdad4f50f3c
https://hal-cnrs.archives-ouvertes.fr/hal-03017738
https://hal-cnrs.archives-ouvertes.fr/hal-03017738
Autor:
Adela Habib, M. Stchakovsky, Jean-Hervé Tortai, Panos Patsalas, Nikolaos Kalfagiannis, Dimitris V. Bellas, Ravishankar Sundararaman, S. Kassavetis, Daniel Gall, B.D. Ozsdolay, Sit Kerdsongpanya
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2019, 123 (34), pp.21120-21129. ⟨10.1021/acs.jpcc.9b04141⟩
Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (34), pp.21120-21129. ⟨10.1021/acs.jpcc.9b04141⟩
Journal of Physical Chemistry C, 2019, 123 (34), pp.21120-21129. ⟨10.1021/acs.jpcc.9b04141⟩
Journal of Physical Chemistry C, American Chemical Society, 2019, 123 (34), pp.21120-21129. ⟨10.1021/acs.jpcc.9b04141⟩
CMOS-compatible, refractory conductors are emerging as the materials that will advance novel concepts into real, practical plasmonic technologies. From the available pallet of materials, those with negative real permittivity at very short wavelengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::811c0ede6afeb00ef122e4906852af0f
https://hal.univ-grenoble-alpes.fr/hal-02279889
https://hal.univ-grenoble-alpes.fr/hal-02279889
Publikováno v:
Proc. SPIE
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.1095918, ⟨10.1117/12.2515181⟩
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.1095918, ⟨10.1117/12.2515181⟩
Nowadays, the accuracy of the metrology is becoming more and more a critical issue for microelectronic manufacturing as new technology nodes necessitate more and more rigorous process control. Scanning Electron Microscope (SEM) is the equipment most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d8782352824238f532300aa6061825
https://hal.archives-ouvertes.fr/hal-02326619
https://hal.archives-ouvertes.fr/hal-02326619