Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies

Autor: Jean-Guy Tartarin, Éric Tournier, Christophe Viallon

Publikováno v: Electronics; Volume 11; Issue 5; Pages: 684
Electronics
Electronics, 2022, 11 (5), pp.684. ⟨10.3390/electronics11050684⟩

International audience; Silicon technologies for HF applications have been proven for more than two decades, and technologies have greatly evolved. Whether CMOS or BiCMOS technologies, the unique combination of radio frequency, baseband, and digital

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b99e8a1bc344e49efec3078489a44c6

Impact of the Frequency Dependence of the Parasitic Admittance on the Diffusion Noise of a Diode Junction at Low Bias

Autor: L. Escotte, Jean-Guy Tartarin, J. Graffeuil

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩

International audience; In this article, we report for the first time that the well-established diffusion noise can be apparently increased in large proportions and that such a situation can be very common at some specific frequencies in the p-n junc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b80f30f91978f9f0795a97b0b1803aea
https://hal.archives-ouvertes.fr/hal-02388640/file/TED-ACCEPTED-FINAL_HAL.pdf

GaN MMIC Differential Multi-function Chip for Ka-Band Applications

Autor: Jean-Guy Tartarin, Remy Leblanc, Hassan Maher, Francois Boone, Christophe Viallon, Boris Berthelot

Publikováno v: 2019 IEEE/MTT-S International Microwave Symposium-IMS 2019
2019 IEEE/MTT-S International Microwave Symposium-IMS 2019, Jun 2019, Boston, United States. pp.1399-1402, ⟨10.1109/MWSYM.2019.8701085⟩
IEEE/MTT-S International Microwave Symposium (IMS 2019)
IEEE/MTT-S International Microwave Symposium (IMS 2019), Jun 2019, Boston, United States. pp.1399-1402, ⟨10.1109/MWSYM.2019.8701085⟩

International audience; High data rate communications have become possible due to improvements in microelectronics, and is based on new topological concepts of architecture. The development of 5G networks using the Ka-band is one of the challenges fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37a5efa5879f35cb721ded2f7271faad
https://hal.archives-ouvertes.fr/hal-02315126/file/IMS_corechipKa_Constellation_final.pdf

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Autor: Laurent Bary, Jean-Guy Tartarin, Benoit Lambert, Oana Lazar, Bernard Franc, Axel Rumeau

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 2020, 114, pp.113895. ⟨10.1016/j.microrel.2020.113895⟩
Microelectronics Reliability, Elsevier, 2020, 114, pp.113895. ⟨10.1016/j.microrel.2020.113895⟩

International audience; The charges in wide bandgap Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) can be identified by means of various methods such as electrical transient and pulsed measurements, or noise spectroscopy methods, usu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90d9e12f769d3768c155c13ac26da852
https://doi.org/10.1016/j.microrel.2020.113895

Methodology for accurate diagnostic of defects in III-N HEMT technologies: Non-destructive and destructive experimental tools — Electrical and T-CAD models

Autor: Laurent Bary, D. Saugnon, J. Graffeuil, Jean-Guy Tartarin

Publikováno v: 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON).

III-V wide bandgap disruptive technology is firmly positioned as a leader for high power segments operating at high frequency or under switching mode. Still, it is needed to investigate these transistors to push the maturity towards higher levels and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91906dcc3feb6c90c08a0b41e96033f0
https://doi.org/10.1109/melcon.2018.8379100