Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jean-Francois Paret"'
Autor:
Yasmine Ibrahimi, Sylvain Boust, Quentin Wilmart, Jean-Francois Paret, Alexandre Garreau, Karim Mekhazni, Catherin Fortin, Francois Duport, Ghaya Baili, Phlippe Charbonnier, Fabrice Blache, Harry Gariah, Stéphanie Garcia, Laurent Vivien, Frédéric van Djik
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-8
Autor:
Corrado Sciancalepore, Francois Duport, Frederic van Dijk, Alexandre Garreau, Jean-Marc Fedeli, Catherine Fortin, Quentin Wilmart, Jean-Francois Paret, Sylvain Boust, Stephanie Garcia, Yasmine Ibrahimi, Karim Mekhazni
Publikováno v:
Journal of Lightwave Technology. 39:7573-7580
Autor:
Frederic van Dijk, Jean-Francois Paret, Catherine Fortin, Alexandre Garreau, Karim Mekhazni, Romain Brenot, Carmen Gomez, Cecil Pham, Francois Duport
Publikováno v:
Journal of Lightwave Technology. 38:1836-1843
High power Semiconductor Optical Amplifiers (SOA) are often integrated in optical systems such as mode locked lasers, hybrid, or monolithically integrated Master Oscillator Power Amplifiers (MOPA) for applications such as LIDAR systems or free space
Autor:
F. Pommereau, Kebede Atra, C. Vagionas, Jean-Francois Paret, Carmen Gomez, Catherine Fortin, Amalia Miliou, Mohand Achouche, Cédric Ware, Karim Mekhazni, Giancarlo Cerulo, Arnaud Wilk, Franck Mallecot, Eugenio Ruggeri, Alexandre Garreau, Didier Erasme, Jean-Guy Provost
Publikováno v:
Conference on Lasers and Electro-Optics, CLEO-2021
Conference on Lasers and Electro-Optics, CLEO-2021, May 2021, Virtual (Online), France
Conference on Lasers and Electro-Optics, CLEO-2021, May 2021, Virtual (Online), France
International audience; We experimentally present a 10-Gb/s Fiber Wireless IFoF/V-band uplink of four625Mbaud 16QAM signals with a linear, high-power monolithically integrated reflective electroabsorptionmodulator with semiconductor optical amplifier
Autor:
Frederic van Dijk, Yasmine Ibrahimi, Jean-Marc Fedeli, Stephanie Garcia, Catherine Fortin, Alexandre Garreau, Karim Mekhazni, Francois Duport, Corrado Sciancalepore, Sylvain Boust, Quentin Wilmart, Jean-Francois Paret
Publikováno v:
International Topical Meeting on Microwave Photonics (MWP)
International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan
2020 IEEE International Topical Meeting on Microwave Photonics (MWP 2020)
2020 IEEE International Topical Meeting on Microwave Photonics (MWP 2020), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020.9314587⟩
International Topical Meeting on Microwave Photonics (MWP), Nov 2020, Matsue, Japan
2020 IEEE International Topical Meeting on Microwave Photonics (MWP 2020)
2020 IEEE International Topical Meeting on Microwave Photonics (MWP 2020), Nov 2020, Matsue, Japan. ⟨10.23919/MWP48676.2020.9314587⟩
International audience; In this paper, we present a 1.19 GHz integrated mode locked laser based on III-V/Si3N4 butt-coupling. We report the results of active mode locking and harmonic mode locking up to the 2nd harmonic. We also present the prelimina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51928b49c8dfb6fa3973cc747ebe379f
https://hal.archives-ouvertes.fr/hal-03285022
https://hal.archives-ouvertes.fr/hal-03285022
Autor:
Frederic van Dijk, Carmen Gomez, Karim Mekhazni, Catherine Fortin, Jean-Francois Paret, Alexandre Garreau, Francois Duport, Jean-Marc Fedeli, Sylvain Boust, Peppino Primiani
Publikováno v:
IEEE Xplore Digital Library
2019 IEEE Photonics Conference (IPC 2019)
2019 IEEE Photonics Conference (IPC 2019), Sep 2019, San Antonio (TX), United States. ⟨10.1109/IPCon.2019.8908522⟩
2019 IEEE Photonics Conference (IPC 2019)
2019 IEEE Photonics Conference (IPC 2019), Sep 2019, San Antonio (TX), United States. ⟨10.1109/IPCon.2019.8908522⟩
International audience; The paper presents a fabrication platform based on silicon nitride embedded in silica on silicon wafers. Long Bragg gratings have been fabricated for narrow linewidth lasers. A narrow stop-band (0.2 nm) Bragg gratings with etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ee39b062b092f70ea8913c367924f0d
https://hal.science/hal-02923911
https://hal.science/hal-02923911
Autor:
Mohand Achouche, Sebastien Bigo, Rafael Rios-Muller, Philippe Charbonnier, Jean-Yves Dupuy, Filipe Jorge, P. Jenneve, Haik Mardoyan, Agnieszka Konczykowska, Fabrice Blache, Karim Mekhazni, M. A. Mestre, Frank Mallecot, Jeremie Renaudier, Jean-Francois Paret, F. Pommereau, Jean Decobert, M. Faugeron, Christophe Caillaud
Publikováno v:
Journal of Lightwave Technology. 34:1572-1578
We demonstrate a 56-GBd pulse-amplitude modulation-4 compact InP transmitter module integrating a distributed feedback laser and an electro-absorption modulator, which exhibits 50-GHz bandwidth, >13-dB extinction ratio and up to 1.5-mW output power.
Autor:
Carmen Gomez, Alexandre Garreau, Francois Duport, Catherine Fortin, Jean-Francois Paret, Frederic van Dijk, Cecil Pham, Romain Brenot, Karim Mekhazni
Publikováno v:
2018 International Topical Meeting on Microwave Photonics (MWP).
High power Semiconductor Optical Amplifiers (SOA) are used in optical systems such as Mode Locked Lasers (MLL) as gain medium, or in Master Oscillator Power Amplifiers (MOPA) when they are monolithically integrated with a DFB Laser. In both applicati
Autor:
F. Pommereau, Mohand Achouche, Jean-Francois Paret, Maria Anagnosti, G. Glastre, Fabrice Blache, Christophe Caillaud
Publikováno v:
Journal of Lightwave Technology. 33:1186-1190
We present a preamplified high-speed photoreceiver comprising a unitraveling carrier photodiode (UTC) monolithically integrated with a semiconductor optical amplifier (SOA). The SOA-UTC photoreceiver exhibits above 95-GHz 3-dB bandwidth, 8-dB noise f
Autor:
Christophe Caillaud, Fabrice Blache, Filipe Jorge, Mohand Achouche, Jean-Francois Paret, Philippe Angelini, Maria Anagnosti
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:29-35
In this paper we present an optimized high-speed uni-traveling carrier photo-diode (UTC PD) for 100 Gbit/s applications. The designed photodiode operates at 1.55 μm wavelength with a 3 dB bandwidth exceeding 110 GHz, a dark current of 1 nA at −2 V