Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jean-François Nodin"'
Autor:
Djohan Bonnet, Tifenn Hirtzlin, Atreya Majumdar, Thomas Dalgaty, Eduardo Esmanhotto, Valentina Meli, Niccolo Castellani, Simon Martin, Jean-François Nodin, Guillaume Bourgeois, Jean-Michel Portal, Damien Querlioz, Elisa Vianello
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-13 (2023)
Abstract Safety-critical sensory applications, like medical diagnosis, demand accurate decisions from limited, noisy data. Bayesian neural networks excel at such tasks, offering predictive uncertainty assessment. However, because of their probabilist
Externí odkaz:
https://doaj.org/article/71a0f04b513342a69e2eef0f95dfe8f1
Autor:
Tyler Hennen, Alexander Elias, Jean-François Nodin, Gabriel Molas, Rainer Waser, Dirk J. Wouters, Daniel Bedau
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for large-scale simulations of computational architectures based
Externí odkaz:
https://doaj.org/article/4c251edd22f94d8ca136176650cb1be3
Autor:
Thomas Bauvent, Paola Trotti, Olivier Billoint, Jean-François Nodin, Yasser Moursy, Gabriel Molas, Gaël Pillonnet
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, In press, pp.1-4. ⟨10.1109/LED.2023.3274219⟩
IEEE Electron Device Letters, In press, pp.1-4. ⟨10.1109/LED.2023.3274219⟩
International audience; Embedded resistive random access memories (RRAM) are commonly written using voltage programming scheme. In this work, we study the device performance under an alternative programming approach. Utilizing the parasitic line capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ce1bb4f8ac1892ae29349fdbf5bdd31
https://hal.science/hal-04115343/file/manuscript_doi_and_copyright.pdf
https://hal.science/hal-04115343/file/manuscript_doi_and_copyright.pdf
Autor:
Sandeep Kaur Kingra, Vivek Parmar, Shubham Negi, Alessandro Bricalli, Giuseppe Piccolboni, Amir Regev, Jean-François Nodin, Gabriel Molas, Manan Suri
Publikováno v:
Applied Physics Letters. 120:034102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd06bd58dbf3ce1afc37c8a820a6cdcd
https://doi.org/10.1063/5.0073284
https://doi.org/10.1063/5.0073284
Autor:
Gabriel Molas, Gilbert Sassine, Cecile Nail, Diego Alfaro Robayo, Jean-François Nodin, Carlo Cagli, Jean Coignus, Philippe Blaise, Etienne Nowak
Publikováno v:
ECS Meeting Abstracts. :747-747
Introduction Resistive random access memory (RRAM) technologies have experienced an increasing interest as next generation non-volatile memory devices. Thanks to their promising characteristics, RRAM are believed to become a good choice for Storage C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89939d67c24d0fc1e69452c22d7b289c
https://doi.org/10.1149/ma2018-02/18/747
https://doi.org/10.1149/ma2018-02/18/747
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 696-702 (2018)
This paper proposes a novel technique for reducing programming time and energy consumption in resistive random access memory (RRAM) arrays based on ramped voltage stress (RVS). RVS method is correlated to conventional constant voltage stress method (
Externí odkaz:
https://doaj.org/article/67610c348d6c4294b2cac131367a94ed