Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Jean-François Barbot"'
Autor:
Razvan Burcea, Jean-François Barbot, Pierre-Olivier Renault, Dominique Eyidi, Thierry Girardeau, Marc Marteau, Fabien Giovannelli, Ahmad Zenji, Jean-Michel Rampnoux, Stefan Dilhaire, Per Eklund, Arnaud le Febvrier
Publikováno v:
ACS Applied Energy Materials. 6:2633-2633
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ba39ef8d7f884ca1775c586090daf3
https://doi.org/10.1021/acsaem.3c00252
https://doi.org/10.1021/acsaem.3c00252
Autor:
Maxime Vallet, Jean-François Barbot, Steve E. Donnelly, Jonathan A. Hinks, Marie-France Beaufort
Publikováno v:
physica status solidi c. 12:1156-1159
The first stages of growth of He-based planar defects under H supply have been investigated in (001)-oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9997f0090a4767fadf3e92f74e7aac86
https://doi.org/10.1002/pssc.201400361
https://doi.org/10.1002/pssc.201400361
Autor:
Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Berangère Toury, Marie France Beaufort, Jean François Barbot, J. Penuelas, Dominique Planson
Publikováno v:
Materials Science Forum. :432-435
In order to form Ti3SiC2 on 4H-SiC(0001) 8°-off, 200 nm of Ti30Al70 was deposited onto SiC substrates by magnetron sputtering from pure Ti30Al70 targets. The samples were then annealed at 1000°C for 10 min under Ar atmosphere in a Rapid Thermal Ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08f3849c89f1bbb1d53da8d168ed8e99
https://doi.org/10.4028/www.scientific.net/msf.821-823.432
https://doi.org/10.4028/www.scientific.net/msf.821-823.432
Publikováno v:
Journal of Electronic Materials. 43:695-701
Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for SiC die attach in high-temperature (300°C) applications. The soldering or sintering conditions were optimized through die shear tests performed at room temperature. In par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07aba014242252e355d5bd82cdfc490
https://doi.org/10.1007/s11664-013-2718-5
https://doi.org/10.1007/s11664-013-2718-5
Publikováno v:
physica status solidi c. 10:44-47
The effect of stress on the formation energy of H-platelets was studied through a 3D model based on elastic interaction by modelling the platelets as dislocation loops. A difference of self-formation energy between {111} and {100} platelets was estim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1546768d2da1201b0d599d1843a6c6
https://doi.org/10.1002/pssc.201200365
https://doi.org/10.1002/pssc.201200365
Publikováno v:
physica status solidi (a). 210:218-221
The defect accumulation in helium-implanted 4H–SiC was studied in a large range of temperatures through the elastic strain build-up determined by using X-ray diffraction measurements. The interstitial type defects formation and accumulation result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f0e2da6a73ad0ac646bb327e0713c80
https://doi.org/10.1002/pssa.201200364
https://doi.org/10.1002/pssa.201200364
Autor:
Jean François Barbot, S. Leclerc, Christophe Tromas, Valerie Audurier, Alain Declémy, Michael Texier, Marie France Beaufort
Publikováno v:
Materials Science Forum. :485-488
Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2828a889c641cf53e0b4f24fd2edfc
https://doi.org/10.4028/www.scientific.net/msf.717-720.485
https://doi.org/10.4028/www.scientific.net/msf.717-720.485
Publikováno v:
Materials Science Forum. :845-848
In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2821f11dd67a3be413c064d7d4202349
https://doi.org/10.4028/www.scientific.net/msf.717-720.845
https://doi.org/10.4028/www.scientific.net/msf.717-720.845
Autor:
Matthieu Amigou, Marie France Beaufort, Alain Declémy, Stephanie Leclerc, Jean François Barbot
Publikováno v:
Materials Science Forum. :185-188
The evolution of the normal strain induced by nitrogen implantation in 4H-SiC was investigated through X-ray diffraction measurements and compared to previous studies on helium implanted SiC. The shape of the normal strain profile in the near surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0383f22083d0c27bca7b0bb3f18721b
https://doi.org/10.4028/www.scientific.net/msf.679-680.185
https://doi.org/10.4028/www.scientific.net/msf.679-680.185