Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jean-Christophe Michel"'
Publikováno v:
Activités, Vol 20, Iss 1 (2023)
Repeated calls for greater autonomy at work are becoming ever louder, yet in concrete terms these calls do not always say what (or whom) autonomy is supposed to serve. Taking the results of a participatory intervention that led to a profound transfor
Externí odkaz:
https://doaj.org/article/1bd036a1fc65476cbeeed0cb69e2e480
Autor:
Lei Wang, L. Depre, Mu Feng, Jean-Christophe Michel, Frederic Robert, Elodie Sungauer, Sanjay Kapasi, Song Lan, Jean-Christophe Le-Denmat, Emek Yesilada
Publikováno v:
SPIE Proceedings.
From 28nm technology node and below, Optical Proximity Correction (OPC) needs to take into account light scattering effects from prior layers when bottom anti-reflective coating (BARC) is not used, which is typical for implant layers. In this paper,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d434bfd7df3d58a11dd5244740ec2235
https://doi.org/10.1117/12.2047115
https://doi.org/10.1117/12.2047115
Publikováno v:
SPIE Proceedings.
Reflection by wafer topography and underlying layers during optical lithography can cause unwanted overexposure in the resist [1]. In most cases, the use of bottom anti reflective coating limits this effect. However, this solution is not always suita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f22624ae3d8b0906148c7db1b22b6b2
https://doi.org/10.1117/12.2045899
https://doi.org/10.1117/12.2045899
Autor:
Jean-Christophe Le-Denmat, Catherine Martinelli, Elodie Sungauer, Jean-Christophe Michel, Emek Yesilada, Frederic Robert
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0146036b459f167f0e04bf2d30d00549
https://doi.org/10.1117/12.2011424
https://doi.org/10.1117/12.2011424
Autor:
Emek Yesilada, Thuy Do, Jean-Christophe Michel, Frederic Robert, John L. Sturtevant, Jean-Christophe Le Denmat, Jorge Entradas, Yuri Granik, Elodie Sungauer, Ana-Maria Armeanu
Publikováno v:
SPIE Proceedings.
Reflection by wafer topography and underlying layers during optical lithography can cause unwanted exposure in the resist [1]. This wafer stack effect phenomenon which is neglected for larger nodes than 45nm, is becoming problematic for 32nm technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09a96fd0bc8d1214a2601f9e2acd5ff
https://doi.org/10.1117/12.2011412
https://doi.org/10.1117/12.2011412
Autor:
B. Le-Gratiet, R. Bouyssou, B. Orlando, Alice Pelletier, Céline Lapeyre, Latifa Desvoivres, Alain Ostrovsky, J. Ducote, Jean Damien Chapon, Auguste Lam, Anna Szucs, Nicolas Chojnowski, Vincent Farys, Onintza Ros Bengoechea, J. Decaunes, Jean-Christophe Michel, Vincent Morin, C. Monget, Marc Mikolajczak, Frank Sundermann, Maxime Gatefait, Pascal Gouraud, Laurene Babaud, Jonathan Planchot, Emek Yesilada
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 14:021103
Patterning process control has undergone major evolutions over the last few years. Critical dimension, focus, and overlay control require deep insight into process-variability understanding to be properly apprehended. Process setup is a complex engin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ea7b96196431f517be1d881d144500
https://doi.org/10.1117/1.jmm.14.2.021103
https://doi.org/10.1117/1.jmm.14.2.021103